A current mirror (CM) based on self cascode MOSFETs low voltage analog and mixed mode structures has been proposed. The proposed CM has high output impedance and can operate at 0.5 V. P-Spice simulations confirm the high performance of this CM with a bandwidth of 6.0 GHz at input current of 100 μA. Keywords—Current Mirrors, Composite Cascode Structure, Current Source/Sink.

The influence of different gate-layout geometries on a cascode nMOSFET’s transit frequencywas studied. Four cascode nMOSFET transistors were fabricated using different interdigitized gate layout geometries. Furthermore, a conventional cascode transistor was fabricated in order to compare it with the proposed interdigitized layouts. The transistors were measured on-wafer and the maximum transit ...

After explaining the basic operation of a SiC JFET plus silicon MOSFET cascode circuit, the dynamics of cascode switching will be discussed and the use of a QRR tester to evaluate the reverse-recovery characteristics of a cascode circuit will be explained. A comparison of the cascode’s reverse recovery with that of a SiC MOSFET reveals that the JFET cascode actually performs better than the SiC...

In this research paper, Simulation and Analysis of innovative folded cascode Operational Amplifier based on carbon nanotubes (CNT) has been performed using 45 nm technology. DC voltage gain, average power, bandwidth and output resistance have been computed. CNT based folded cascode Op Amp results in high performance with the increase of CNTs. For example, the increase in DC gain is 41.48% in pC...

in this study an ultra-broad band, low-power, and high-gain cmos distributed amplifier (cmos-da) utilizing a new gain-cell based on the inductively peaking cascaded structure is presented. it is created bycascading of inductively coupled common-source (cs) stage and regulated cascode configuration (rgc).the proposed three-stage da is simulated in 0.13 μm cmos process. it achieves flat and high ...

This paper presents a simple behavioral model with experimentally extracted parameters for packaged cascode gallium nitride (GaN) field-effect transistors (FETs). This study combined a level-1 metal–oxide–semiconductor field-effect transistor (MOSFET), a junction field-effect transistor (JFET), and a diode model to simulate a cascode GaN FET, in which a JFET was used to simulate a metal-insulat...

This work presents the design of an inductively source degenerated CMOS differential common source cascode Low Noise Amplifier (LNA) operating at 2 GHz frequency. An inductor is added at the drain of the main transistor to reduce the noise contribution of the cascode transistors. Another inductor connected at the gate of the cascode transistor and capacitive cross-coupling are strategically com...

AbstractThis paper deals with the design and analysis of folded cascode operational transconductance amplifier in different regions of operations: strong, weak and moderate inversion region. The folded cascode OTA consists of cascode OTA and cascode gain boosting technique. By using 0.35μm technology, the simulation shows DC gain of 78.42dB with a unity gain bandwidth of 446.07 MHz and power co...

Low voltage (LV) analog circuit design techniques are addressed in this tutorial. In particular, (i) technology considerations; (ii) transistor model capable to provide performance and power tradeoffs; (iii) low voltage implementation techniques capable to reduce the power supply requirements, such as bulk-driven, floating-gate, and self-cascode MOSFETs; (iv) basic LV building blocks; (v) multi...