The effect of spin-orbit interaction on persistent currents in mesoscopic Hubbard rings threaded by an Aharonov-Bohm flux is investigated putting stress on the orbital magnetism. The non-perturbative treatment of the spin-orbit interaction developed by Meir et al. is combined with the Bethe ansatz solution to deal with this problem exactly. We find that the interplay of spin-orbit interaction a...

We report results of calculations of the effect of spin-orbit interaction on electron spin relaxation in a lateral quantum dot. Our study is motivated by puzzling results of high source-drain transport measurements of singlet-triplet transitions of two electrons in lateral and vertical devices that show a strong asymmetry as a function of the applied magnetic field. Using exact diagonalization ...

We present analysis of the interacting quantum wire problem in the presence of magnetic field and spin-orbital interaction. We show that an interesting interplay of Zeeman and spin-orbit terms, facilitated by the electron-electron interaction, results in the spin-density wave (SDW) state when the magnetic field and spin-orbit axes are orthogonal. We explore consequences of the spin-orbit intera...

We construct a unified semiclassical theory of charge and spin transport in chaotic ballistic and disordered diffusive mesoscopic systems with spin-orbit interaction. Neglecting dynamic effects of spin-orbit interaction, we reproduce the random matrix theory results that the spin conductance fluctuates universally around zero average. Incorporating these effects into the theory, we show that ge...

Spin accumulation is a crucial but imprecise concept in spintronics. In metal-based spintronics it is characterized in terms of semiclassical distribution functions. In semiconductors with a strong spin-orbit coupling the spin accumulation is interpreted as a superposition of coherent eigenstates. Both views can be reconciled by taking into account the electron-electron interaction: a sufficien...

The electron spin properties are promising for future spin-driven applications. Silicon, the major material of microelectronics, also appears to be a perfect material for spintronic applications. The peculiarities of the subband structure and details of the spin propagation in ultra-thin silicon films in presence of the spin-orbit interaction and strain are investigated. The application of shea...

The effects of the spin-orbit and the tensor parts of the instanton-induced interaction on the excited nonstrange baryons up to N=2 and on the two-nucleon systems are investigated. The spin-orbit force from the instanton-induced interaction cancels most of that from the one-gluon exchange in the excited baryons while the spin-orbit force in the nucleon systems remains strong after the inclusion...

The electronic properties of silicene are distinct from both the conventional two dimensional electron gas and the famous graphene due to strong spin orbit interaction and the buckled structure. Silicene has the potential to overcome limitations encountered for graphene, in particular the zero band gap and weak spin orbit interaction. We demonstrate a valley polarized quantum Hall effect and to...