نتایج جستجو برای: spin valve

تعداد نتایج: 229433  

Journal: :Nano letters 2013
Shixiong Zhang Shadi A Dayeh Yan Li Scott A Crooker Darryl L Smith S T Picraux

We demonstrate all-electrical spin injection, transport, and detection in heavily n-type-doped Si nanowires using ferromagnetic Co/Al(2)O(3) tunnel barrier contacts. Analysis of both local and nonlocal spin valve signals at 4 K on the same nanowire device using a standard spin-transport model suggests that high spin injection efficiency (up to ~30%) and long spin diffusion lengths (up to ~6 μm)...

Journal: :Physical review letters 2011
Denis Kochan Martin Gmitra Jaroslav Fabian

The spin-valve complex magnetoimpedance of symmetric ferromagnet-normal-metal-ferromagnet junctions is investigated within the drift-diffusion (standard) model of spin injection. The ac magnetoresistance-the real part difference of the impedances of the parallel and antiparallel magnetization configurations-exhibits an overall damped oscillatory behavior, as an interplay of the diffusion and sp...

Journal: :Science 2012
Tho D Nguyen Eitan Ehrenfreund Z Valy Vardeny

The spin-polarized organic light-emitting diode (spin-OLED) has been a long-sought device within the field of organic spintronics. We designed, fabricated, and studied a spin-OLED with ferromagnetic electrodes that acts as a bipolar organic spin valve (OSV), based on a deuterated derivative of poly(phenylene-vinylene) with small hyperfine interaction. In the double-injection limit, the device s...

2016
Benedict A. Murphy Andrew J. Vick Marjan Samiepour Atsufumi Hirohata

An all-metal lateral spin-valve structure has been fabricated with a medial Copper nano-ring to split the diffusive spin-current path. We have demonstrated significant modulation of the non-local signal by the application of a magnetic field gradient across the nano-ring, which is up to 30% more efficient than the conventional Hanle configuration at room temperature. This was achieved by passin...

2007
G. Xiang

Abstract We report the observation of the spin valve effect in (Ga,Mn)As/p-GaAs/(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current in plane geometry reveal positive magnetoresistance peaks when the two ferromagnetic layers are magnetized orthogonal to each other. Measurements carried out for different post-growth annealing conditions and spacer layer thickness...

2000
M. Mao S. Vaidya

Spin-valve films of structure NiFeCo/Co/Cu/NiFeCo(Co)/FeMn/Cu were deposited on Si substrates by DC planetary magnetron sputtering techniques. The influence of base pressure, P,, on spin-valve properties was studied by varying P, over two decades from 3x10-’ to 7~10~~ Torr. The GMR ratio show a slight increase with increasing P, until a large decrease occurs at Pd3.3~1 W6 Torr. Exchange bias fi...

Journal: :Nano Letters 2007

2001
Jisang Hong

The material dependence of hot electron magnetotransport in a spin-valve transistor has been theoretically explored. We calculate the parallel and antiparallel collector current changing the types and relative spin orientation of the ferromagnetic layers. The magnetocurrent has been presented as well. In this calculations, spin dependent self energy effect of hot electron in ferromagnetic mater...

2002
Eldon G. Emberly

We present a theoretical study of spin-dependent transport through molecular wires bridging ferromagnetic metal nanocontacts. We extend to magnetic systems a recently proposed model that provides a quantitative explanation of the conductance measurements of Reed et al. [1] on Au break-junctions bridged by self-assembled molecular monolayers (SAMs) of 1,4-benzene-dithiolate (BDT) molecules. Base...

Journal: :IEEE Transactions on Magnetics 2006

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