Sputter erosion of materials is among the most important techniques for fabricating advanced thin film coatings. Sputter processes are also of considerable relevance for surface polishing down to an atomic scale, nanostructuring of surfaces as dot and ripple patterns and micromachining of materials using focused ion beams or reactive ion etching. We present a new, versatile sputter technique ut...

A method based on the sidewall transfer technique for fabricating two-dimensional (2D) nano-mold on a silicon substrate was developed. Instead of using expensive nanolithography, the authors fabricated 2D silicon nano-mold using standard ultraviolet lithography, conformal deposition of gold by radio frequency sputtering, argon sputter etching and deep reactive ion etching (DRIE). This technique...

This work reports fabrication details of heterojunction diodes and solar cells obtained by sputter deposition of amorphous GaAs on p-doped single crystalline Si. The effects of two additional process steps were investigated: A hydrofluoric acid (HF) etching treatment of the Si substrate prior to the GaAs sputter deposition and a subsequent annealing treatment of the complete layered system. A t...

The effects of the wet-chemical and plasma treatments on the adhesion of electroless and sputter-deposited copper to the photodefinable epoxy have been investigated. The wet-chemical treatment increased the amounts of oxygen-containing functionalities on the epoxy surface mainly during the early stage of etching. With the longer etching the pronounced surface roughness was revealed in the form ...

A novel low-cost 2D silicon nano-mold fabrication technique was developed based on Cu inclined-deposition and Ar(+) (argon ion) etching. With this technique, sub-100 nm 2D (two dimensional) nano-channels can be etched economically over the whole area of a 4 inch n-type <100> silicon wafer. The fabricating process consists of only 4 steps, UV (Ultraviolet) lithography, inclined Cu deposition, Ar...

Holes with different sizes from microscale to nanoscale were directly fabricated by focused ion beam (FIB) milling in this paper. Maximum aspect ratio of the fabricated holes can be 5:1 for the hole with large size with pure FIB milling, 10:1 for gas assistant etching, and 1:1 for the hole with size below 100 nm. A phenomenon of volume swell at the boundary of the hole was observed. The reason ...