نتایج جستجو برای: tetrahydrobenzoaxanthenes 11 one

تعداد نتایج: 2284699  

Journal: :Bulletin of the Chemical Society of Japan 1981

Journal: :Acta Crystallographica Section E Structure Reports Online 2011

Journal: :Acta Crystallographica Section E Structure Reports Online 2011

2010
Jerry P. Jasinski Q. N. M. Hakim Al-arique Ray J. Butcher H. S. Yathirajan B. Narayana

In the title compound, C(14)H(10)OS, the seven-membered thiepin ring adopts a distorted boat conformation with the dihedral angle between the mean planes of the two fused benzene rings being 56.5 (1)°.

2009
Jerry P. Jasinski Q. N. M. Hakim Al-arique Ray J. Butcher H. S. Yathirajan B. Narayana

In the title compound, C(14)H(10)O(2), the seven-membered oxepine ring adopts a twist-boat conformation with a dihedral angle between the mean planes of the two fused benzene rings of 42.0 (1)°. In the crystal, mol-ecules are linked into chains propagating along the c axis by inter-molecular C-H⋯O hydrogen bonds and the chains are arranged in layers parallel to (100).

2010
Raza Murad Ghalib Rokiah Hashim Othman Sulaiman Madhukar Hemamalini Hoong-Kun Fun

In the title compound, C(15)H(8)N(2)O, the fused ring system is approximately planar, with a maximum deviation of 0.039 (1) Å. In the crystal, weak inter-molecular C-H⋯O inter-actions help to establish the packing.

Journal: :Acta crystallographica. Section C, Crystal structure communications 2004
Raymond Bonnett Majid Motevalli Fiona J Swanson María Asunción Vallés

The title compound {alternative names: 11-methyl-2,3-benzopyrromethenone and 3-[(1-methylpyrrol-2-yl)methylidene]-2,3-dihydro-1H-isoindol-1-one}, C(14)H(12)N(2)O, was prepared by the base-catalysed condensation of phthalimidine with 2-formyl-1-methylpyrrole; yellow orthorhombic crystals, space group Pbca, were obtained from ethanol. The molecule is almost planar, having Z(-)antiperiplanar geome...

2014
Jonathan F. Bolus Travis N. Blalock

A 39 fJ/bit IC identification system based on FET mismatch is presented and implemented in a 130 nm CMOS process. ID bits are generated based on the ∆VT between identically drawn NMOS devices due to manufacturing variation, and the ID cell structure allows for the characterization of ID bit reliability by characterizing ∆VT . An addressing scheme is also presented that allows for reliable on-ch...

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