نتایج جستجو برای: thin film behaves as a semiconductor

تعداد نتایج: 14062177  

2012
Matthew J. Panzer Katherine E. Aidala Vladimir Bulović

Novel thin film optoelectronic devices containing both inorganic colloidal semiconductor quantum dots (QDs) and organic semiconductor thin films have been widely investigated in recent years for a variety of applications. Here, we review one of the most versatile and successful methods developed to integrate these two dissimilar material classes into a functional multilayered device: contact pr...

Journal: :Journal of the American Chemical Society 2006
Hong Meng Fangping Sun Marc B Goldfinger Feng Gao David J Londono Will J Marshal Greg S Blackman Kerwin D Dobbs Dalen E Keys

The development of new organic semiconductors with improved electrical performance and enhanced environmental stability is the focus of considerable research activity. This paper presents the design, synthesis, optical and electrochemical characterization, crystal packing, modeling and thin film morphology, and organic thin film field effect transistor (OTFT) device data analysis for a novel 2,...

Journal: :Physical review letters 2015
Zumin Wang Lars P H Jeurgens Wilfried Sigle Eric J Mittemeijer

Extraordinarily high mobility of Si and Ge atoms at semiconductor (Si, Ge)-metal (Al) interfaces is observed at temperatures as low as 80 K during thin metal film deposition. In situ x-ray photoemission spectroscopic valence-band measurements reveal a changed chemical bonding nature of the semiconductor atoms, from localized covalentlike to delocalized metalliclike, at the interface with the Al...

2018
Nima Khoshsirat Nurul Amziah Md Yunus

The Copper Indium Gallium diSelenide (CIGS) thin film solar cells are considered in this chapter. The interest in Cu(In1-x, Gax)Se2 thin film solar cells has increased significantly due to its promising characteristics for high performance and low cost. It is aimed to present an extensive evaluation on CIGS nanocrystalline bulk semiconductor and its application as an absorber layer for thin fil...

Journal: :international journal of nano dimension 0
s. sagadevan department of physics, sree sastha institute of engineering and technology, chembarambakkam, chennai 600123, india. k. pandurangan department of physics, madha engineering college, kundrathur, chennai, india.

nowadays, ii – iv group semiconductor thin films have attracted considerable attention from the research community because of their wide range of application in the fabrication of solar cells and other opto-electronic devices. cadmium zinc sulfide (zn-cds) thin films were grown by chemical bath deposition (cbd) technique. x-ray diffraction (xrd) is used to analyze the structure and crystallite ...

Journal: :Nature electronics 2021

Printed electronics using inks based on graphene and other two-dimensional materials can be used to create large-scale, flexible wearable devices. However, the complexity of ink formulations polycrystalline nature resulting thin films have made it difficult examine charge transport in such Here we report mechanisms surfactant- solvent-free inkjet-printed thin-film devices few-layer (semimetal),...

Esmaeil Zaminpayma

The most commonly used method for the production of thin films is based on deposition of atoms or molecules onto a solid surface. One of the suitable method is to produce high quality metallic, semiconductor and organic thin film is Ionized cluster beam deposition (ICBD), which are used in electronic, robotic, optical, optoelectronic devices. Many important factors such as cluster size, cluster...

Ethanol (C2H6O) sensitivity of zinc oxide (ZnO) thin film has been studied in present work. Semiconductor thin films of zinc oxide (ZnO) were deposited onto alkali-free glass substrates by the sol–gel method and dip-coating technique. The ZnO sol was synthesized by dissolving zinc acetate dehydrate in ethanol, and then adding Tetra ethanol-amine.  The as-coated films were preheated at 150 ºC fo...

2015
Woobin Lee Seungbeom Choi Kyung Tae Kim Jingu Kang Sung Kyu Park Yong-Hoon Kim

We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a pe...

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