In this study, we report the optical properties and carrier dynamics of different surface dimensionality n-type wurtzite InN with various concentrations using photoluminescence (PL) an energy-dependent, time-resolved (ED-TRPL) analysis. Experimental results indicated that morphology can be controlled by growth temperature, from one-dimensional (1D) nanorods to two-dimensional (2D) films. Moreov...

InGaN quantum dots (QDs) are promising candidates for GaN-based all-visible optoelectronic devices such as micro light-emitting diode and laser. In this study, self-assembled InGaN/GaN multi-quantum (MQDs) have been grown by plasma-assisted molecular beam epitaxy on c-plane GaN-on-sapphire template. A high density of over 3.8 × 1010 cm−2 is achieved QDs exhibit a relatively uniform size distrib...

The following study focuses on the photoluminescence (PL) enhancement of chemically synthesized silicon oxycarbide (SiCxOy) thin films and nanowires through defect engineering via post-deposition passivation treatments. SiCxOy materials were deposited via thermal chemical vapor deposition (TCVD), and exhibit strong white light emission at room-temperature. Post-deposition passivation treatments...

The open-circuit voltage (VOC) is the main limitation to higher efficiencies of Cu(In,Ga)Se2 solar cells. One most critical parameters directly affecting VOC charge carrier lifetime. Therefore, it essential evaluate extent which inhomogeneities in material properties limit lifetime and how postdeposition treatments (PDTs) growth conditions affect properties. Time-resolved photoluminescence (TRP...

The spin and optical polarization based on a coupled InGaN/GaN quantum well (QW) and quantum dots (QDs) structure is investigated. In this structure, spin-electrons can be temporarily stored in QW, and spin injection from the QW into QDs via spin-conserved tunneling is enabled. Spin relaxation can be suppressed owing to the small energy difference between the initial state in the QW and the fin...

We investigate triple-delta-doped ZnSe:Te samples grown with different Te/Zn flux ratios using timeresolved photoluminescence (TRPL). We show that the properties of the TRPL of both samples are consistent with the presence of quantum islands with a type-II band alignmrnt. Moreover, from the comparison of the PL, we show that higher Te/Zn flux ratio during the growth leads to the formation of la...

We have demonstrated a record short wavelength lasing at 244.63 nm with TE dominant polarization from GaN quantum wells (QWs) room temperature (RT). The optical threshold of 310 kW/cm2 is comparable to state-of-the-art AlGaN QW lasers similar wavelengths. sample was grown on the AlN/sapphire template pesudomorphically. X-ray diffraction (XRD) shows unambiguous higher-order satellite peaks indic...

Based on carrier rate equation, a new model is proposed to explain the non-exponential nature of time-resolved photoluminescence (TRPL) decay curves in the polar InGaN/GaN multi-quantum-well structures. From the study of TRPL curves at different temperatures, it is found that both radiative and non-radiative recombination coefficients vary from low temperature to room temperature. The variation...

Strong localization effect in self-assembled InGaN quantum dots (QDs) grown by metalorganic chemical vapor deposition has been evidenced by temperature-dependent photoluminescence (PL) at different excitation power. The integrated emission intensity increases gradually in the range from 30 to 160 K and then decreases with a further increase in temperature at high excitation intensity, while thi...

The sidewall condition is a key factor determining the performance of micro-light emitting diodes (µLEDs). In this study, equilateral triangular III-nitride blue µLEDs are prepared with exclusively m-plane surfaces to confirm impact conditions. It found that inductively coupled plasma-reactive ion etching (ICP-RIE) causes surface damages and results in rough morphology. As confirmed by time-res...