نتایج جستجو برای: transition metal dichalcogenide
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Articles you may be interested in Acoustic phonon assisted free-carrier optical absorption in an n-type monolayer MoS2 and other transition-metal dichalcogenides J. Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects Appl. Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field ...
Twisted multilayers of two-dimensional (2D) materials are an increasingly important platform for investigating quantum phases matter, and in particular, strongly correlated electrons. The moir\'e pattern introduced by the relative twist between layers creates effective potentials long-wavelength, leading to electron localization. However, contrast abundance 2D materials, few twisted heterostruc...
The valence band maxima of most group-VI transition metal dichalcogenide thin films remain at the $\Gamma$-point all way from bulk to bilayer. In this paper we develop a continuum theory moir\`e minibands that are formed in bands $\Gamma$-valley homobilayers by small relative twist. Our effective is benchmarked against large-scale ab initio electronic structure calculations account for lattice ...
Gold-mediated exfoliation of ultralarge optoelectronically perfect monolayers with lateral dimensions up to ≈500 μm is reported. Electrical, optical, and X-ray photo-electron spectroscopy characterization show that the quality of the gold-exfoliated flakes is similar to that of tape-exfoliated flakes. Large-area flakes allow manufacturing of large-area mono-layer transition metal dichalcogenide...
Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications.
Transition Metal Dichalcogenide Monolayers In article number 2203602, Jiang Pu, Taishi Takenobu, Yasumitsu Miyata, and co-workers report interfacial electroluminescence in in-plane heterostructures based on transition metal dichalcogenide monolayers. Various combinations of large-area, highly crystalline with sharp interfaces are grown by chemical vapor deposition. Significantly, the WS2/WSe2 e...
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