ABA-stacked trilayer graphene is a unique 2D electron system with mirror reflection symmetry and unconventional quantum Hall effect. We present low-temperature transport measurements on dual-gated suspended trilayer graphene in the quantum Hall (QH) regime. We observe QH plateaus at filling factors ν = -8, -2, 2, 6, and 10, which is in agreement with the full-parameter tight binding calculation...

We study the Landau level spectrum of ABAand ABC-stacked trilayer graphene. We derive analytic lowenergy expressions for the spectrum, the validity of which is confirmed by comparison to a π -band tight-binding calculation of the density of states on the honeycomb lattice. We further study the effect of a perpendicular electric field on the spectrum, where a zero-energy plateau appears for ABC ...

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric double-layer transistors to continuously tune the carrier density up to values exceeding 10(14) cm(-2). Whereas in monolayer the conductivity saturates, in bi- and trilayer filling of the higher-energy bands is observed to cause a nonmonotonic behavior of the conductivity and a l...

The van de Waals heterostructure formed by an epitaxial trilayer graphene is of particular interest due to its unique tunable electronic band structure and stacking sequence. However, to date, there has been a lack in the fundamental understanding of the electronic properties of epitaxial trilayer graphene. Here, we investigate the electronic properties of large-area epitaxial trilayer graphene...

We report a systematic investigation of the colour contrast (CC) of graphene (one, two and three layers) on 50, 72 and 80 nm thick Al(2)O(3)/Si(100) and 100 and 300 nm thick SiO(2)/Si(100). The CC is determined by the analysis of optical microscopy images taken under white light illumination. A corresponding assignment of graphene in the single-layer, double-layer and trilayer phases is made us...

Bilayer graphene has attracted wide attention due to its unique band structure and bandgap tunability under specific (Bernal or AB) stacking order. However, it remains challenging to tailor the stacking order and to simultaneously produce large-scale and high-quality bilayer graphene. This work introduces a fast and reliable method of growing high-quality Bernal stacked large-area (>3 in. × 3 i...

Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective ma...

The transport properties of few-layer graphene are the directly result of a peculiar band structure near the Dirac point. Here, for epitaxial graphene grown on SiC, we determine the effect of charge transfer from the SiC substrate on the local density of states (LDOS) of trilayer graphene using scaning tunneling microscopy/spectroscopy and angle resolved photoemission spectroscopy (ARPES). Diff...

A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field1–7. Thicker graphene layers are also highly attractive materials. The ability to produce a band gap in these systems is of great fundamental and practical interest. Both experimental8 and theoretical9–16 investigations of graphene trilay...

Quantum Hall effect provides a simple way to study the competition between single particle physics and electronic interaction. However, electronic interaction becomes important only in very clean graphene samples and so far the trilayer graphene experiments are understood within non-interacting electron picture. Here, we report evidence of strong electronic interactions and quantum Hall ferroma...