This letter deals with a magnetic tunnel junction having spin filtering by a magnetic barrier. We performed experiments in which a relatively strong external field rotates magnetizations of both ferromagnetic electrodes in the tunnel junction with the magnetic barrier simultaneously so that the two are always parallel to each other. The tunnel magnetoresistance induced in this way was over 16% ...

High speed wind tunnels are widely used in the study of fluid flow behavior around various objects. The air flow in the starting step of supersonic wind tunnels is transient including strong shock waves caused by the interaction of the tunnel main stream and the boundary layer at walls. To arrive in running step, the tunnel must be designed so as these waves leave immediately the test section. ...

Previous measurements of the electronic conductance of DNA nucleotides or amino acids have used tunnel junctions in which the gap is mechanically adjusted, such as scanning tunneling microscopes or mechanically controllable break junctions. Fixed-junction devices have, at best, detected the passage of whole DNA molecules without yielding chemical information. Here, we report on a layered tunnel...

High speed wind tunnels are widely used in the study of fluid flow behavior around various objects. The air flow in the starting step of supersonic wind tunnels is transient including strong shock waves caused by the interaction of the tunnel main stream and the boundary layer at walls. To arrive in running step, the tunnel must be designed so as these waves leave immediately the test section. ...

theory, when appropriate allowances are made for the noisy freestream and the nonlinear disturbances not identified by the linear theories. It remains to be determined if the incompatibility of planar boundary-layer instability phenomena with classical linear stability theory is a unique feature of the planar boundary layer or if it is a noisy wind-tunnel characteristic that affects planar boun...

Articles you may be interested in Interlayer exchange coupled composite free layer for CoFeB/MgO based perpendicular magnetic tunnel junctions J. Thermal stability and spin-transfer switchings in MgO-based magnetic tunnel junctions with ferromagnetically and antiferromagnetically coupled synthetic free layers Appl. Effect of interlayer coupling in CoFeB/Ta/NiFe free layers on the critical switc...

Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel ...

We report here the development of Pt and Pd-free perpendicular magnetic tunnel junctions (p-MTJ) for STT-MRAM applications. We start by studying a p-MTJ consisting of a bottom synthetic Co/Pt reference layer and a synthetic FeCoB/Ru/FeCoB storage layer covered with an MgO layer. We first investigate the evolution of RKKY coupling with Ru spacer thickness in such a storage layer. The coupling be...

In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al2O3/HfO2 tunnel oxide and we compare it to the same memory structure with 2.85-nm Si nanoparticles charge trapping layer. The results show that graphene nanoplatelets with Al2O3/HfO2 tunnel oxide allow for larger memory windows at...