We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the orbital effects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to the TAMR effect with...

In this article, we explore, experimentally, the impact of band-to-band tunneling on the electronic transport of double-gated WSe2 field-effect transistors (FETs) and Schottky barrier tunneling of holes in back-gated MoS2 FETs. We show that by scaling the flake thickness and the thickness of the gate oxide, the tunneling current can be increased by several orders of magnitude. We also perform n...

the conventional tunneling procedures for example drilling, charging, blasting, loading and supporting, are highly developed. new tunneling machines have recently come into operation and others are under construction or development. impactors are used in large numbers in the coal mining industry. face-heading machines are successfully used in new tunneling procedures in both soft and medium-har...

Two single-molecule magnets are coupled antiferromagnetically to form a supramolecule dimer. We study the coupling effect and tunneling process by means of the numerical exact diagonalization method, and apply them to the recently synthesized supramoleculer dimer [Mn4]2. The model parameters are calculated for the dimer based on the tunneling process. The absence of tunneling at zero field and ...

A numerical simulation of spin-dependent quantum transport for a spin field effect transistor is implemented in a widely used simulator, nanoMOS. This method includes the effect of both spin scattering in the channel and the tunneling barrier between the source/drain and the channel. Accounting for these factors permits setting more realistic performance limits for the transistor, especially th...

Dissociation of HeRh2+ in high electric field occurs by tunneling of a neutral He out of the ion. This tunneling process occurs most readily when it is rotated 180. from its desorbed orientation. This rotation time is measured to be 790221 fs. The tunneling effect is supported by a very strong isotope effect observed when 4 ~ e is replaced by 3 ~ e , and also by a WKB calculation of barrier pen...

Resonant tunneling process in an (InGa)As-(InAl)As syInrnetric double-barrier

A physical model of electron trapping/detrapping in electrically stressed oxide has been proposed in this paper. The new model is based on both inelastic multi-phonon trap-assisted tunneling and thermal emission, and also considers the capture effect of oxide bulk traps. It handles every trap separately, and establishes the dynamic procedure of traps capture and emission of electrons. Finally, ...