We have investigated the theory of the plasmon-plariton niodes of a pr iodic metallic heterostructure d i n g use of a local theory. A rich spectrum is found of b t h buU: and surface excitations whose freguency depends upon the dielectric properties of each constituent. We discuss the connections of our analysis with the results obtained within a non-local theory and the effects of retardation...

Two-dimensional (2D) layered materials consist of covalently bonded 2D atomic layers stacked by van der Waals interactions. Such anisotropic bonding nature gives rise to the orientation-dependent functionalities of the 2D layered materials. Different from most studies of 2D materials with their atomic layers parallel to substrate, we have recently developed layer vertically aligned 2D material ...

In this paper, we synthesized a novel type II cuprous sulfide (Cu(2)S)-indium sulfide (In(2)S(3)) heterostructure nanocrystals with matchstick-like morphology in pure dodecanethiol. The photovoltaic properties of the heterostructure nanocrystals were investigated based on the blends of the nanocrystals and poly(2-methoxy-5-(2'-ethylhexoxy)-p-phenylenevinylene) (MEH-PPV). In comparison with the ...

Lead Iodide Stability In article number 2000183, Yuanzheng Li, Weizhen Liu, and co-workers propose a novel feasible strategy for improving the photostability of PbI2 via constructing type-I heterostructures with ZnO high thermal conductivity. Besides, due to band alignment between PbI2, photoluminescence intensity is enhanced nearly 8-fold under 320 nm laser excitation.

We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling i...

Submitted for the MAR14 Meeting of The American Physical Society Quantum mechanical solver for confined heterostructure tunnel field-effect transistors DEVIN VERRECK, imec, KU Leuven, MAARTEN VAN DE PUT, BART SOREE, imec, Universiteit Antwerpen, ANNE VERHULST, imec, WIM MAGNUS, imec, Universiteit Antwerpen, WILLIAM VANDENBERGHE, University of Texas at Dallas, GUIDO GROESENEKEN, imec, KU Leuven ...

A diode with Sb-doped p-type ZnO, MgZnO/ZnO/MgZnO double heterostructure, and undoped n-type ZnO layers was grown on c-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. Hall effect measurement showed that the top p-type Sb-doped ZnO layer has a hole concentration of 1 10cm . Mesa geometry light emitting diodes were fabricated with Au/Ni and Au/Ti Ohmic contacts on top of the p...