This paper investigates the effect of gate electrode work function in 30 nm gate length conventional and junctionless FinFETs using technology computer-aided design (TCAD) simulations. DC parameters, threshold voltage (vt), drive current (Ion) and output resistance (Ro), and RF parameters, unity gain cutoff frequency (ft), non-quasi static (NQS) delay and input impedance (Z11) are investigated....

In this paper, a study in terms of gain, unity gain frequency of operational transconductance amplifiers (OTAs) using feedforward technique with FDCM has been carried out. OTA having feedforward technique with FDCM shows gain of 68 dB at 1nA bias current and 10 KHz 1GHz unity gain frequency characteristics. The input bias current from 1nA to 1mA has been varied for study. The CMOS OTA has been ...

Because of the prospect of low cost and high integration of scaled CMOS, much effort is being focused on its use for Radio-Frequency (RF) communication circuits. Low Noise Amplifiers (LNA) are essential building blocks for the design of communication systems, and some applications would benefit from the use of low cost CMOS transistor technology to build the LNA. MOS transistors are typically c...

Recently, we developed a low power consumption and small total capacitance switched-capacitor filter using a single operational amplifier. It is called a semi-parallel cyclic type (SPCT) filter, in which each capacitance is in proportion to the square root of a transfer function coefficient value. In this paper, we propose the SPCT filter using a single unity gain buffer (UGB). It will be refer...

In this paper, the transient device performance analysis of n-type Gate Inside JunctionLess Transistor (GI-JLT) has been evaluated. 3-D Bohm Quantum Potential (BQP) transport device simulation has been used to evaluate the delay and power dissipation performance. GI-JLT has a number of desirable device parameters such as reduced propagation delay, dynamic power dissipation, power and delay prod...

The performance analysis of the two-stage CMOS operational amplifiers employing Miller capacitor in conjunction with the common-gate current buffer is presented. Unlike the previously reported design strategy of the opamp of this type, which results in the opamp with a lower power supply requirements, better phase margin and better speed. The Opamp is designed to exhibit a unity gain frequency ...

AlN/GaN single heterojunction MOS-HEMTs grown by molecular beam epitaxy have been fabricated utilising HfO2 high-K dielectrics deposited by atomic layer deposition. Typical DC transfer characteristics of 1.3 mm gate length devices show a maximum drain current of 950 mA/mm and a transconductance of 210 mS/mm with gate currents of 5 mA/mm in pinch-off. Unity gain cutoff frequencies, ft and fmax, ...

A numerical design method is presented for the design of all pole band pass active-RC filters applying just one operational amplifier. The operational amplifier model used is the integrator model: t/s where t is the unity gain frequency. The design method is used for the design of a fourth order band pass filter with Butterworth poles applying just one operational amplifier coupled as a unity g...

Top-gated graphene transistors operating at high frequencies (GHz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating an FET-like behavior for graphene transistors. The cutoff frequency fT is found to be proportional to the dc transconductance gm of the device, consistent with the relation fT=gm/(2πCG)...

Abstract: This paper presents a new methodology for design of high speed CMOS operational amplifier in Sub-micron region. The opamp uses a compensation technique which increases the unity gain frequency and phase margin simultaneously. The CMOS op-amp presented in this paper works on 1.5V designed in 65nm standard CMOS technology. It exhibits 86dB DC gain. With load of 5pF, the unity gain frequ...