The growth of III-V semiconductors on silicon would allow the integration of their superior (opto-)electronic properties with silicon technology. But fundamental issues such as lattice and thermal expansion mismatch and the formation of antiphase domains have prevented the epitaxial integration of III-V with group IV semiconductors. Here we demonstrate the principle of epitaxial growth of III-V...

To date the strategy for inducing pinning in REBa2Cu3O7−x (REBCO where RE=rare-earth) coated conductors has largely been empirical. Hence, we are not yet at a point where we can dialin the compositions and process parameters to optimise pinning for particular applications having specific temperature, field, and field angle requirements. In this review, we cover the critical materials science ...

Herein we investigate a (001)-oriented GaAs1-xBix/GaAs structure possessing Bi surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth, through the vapour-liquid-solid mechanism. Specifically, self-aligned "nanotracks" are found to exist trailing the Bi droplets on the sample surface. Through cross-sectional high-resolution transmission electron microscopy t...

We have investigated the low-temperature epitaxial growth of thin silicon films by hotwire chemical vapor deposition (HWCVD). Using reflection high energy electron diffraction (RHEED) and transmission electron microscopy (TEM), we have found conditions for epitaxial growth at low temperatures achieving twinned epitaxial growth up to 6.8 μm on Si(100) substrates at a substrate temperature of 230...

We investigate low-temperature epitaxial growth of thin silicon films by HWCVD on Si w1 0 0x substrates and polycrystalline template layers formed by selective nucleation and solid phase epitaxy (SNSPE). We have grown 300-nm thick epitaxial layers at 300 8C on silicon w1 0 0x substrates using a high H :SiH ratio of 70:1. Transmission electron microscopy confirms that the 2 4 films are epitaxial...

..................................................................................................................... x CHAPTER 1 : INTRODUCTION .................................................................................... 1 ................................................................................................ 1.1 Purpose of Work 1 .................................................

The solid-phase epitaxial growth kinetics of amorphized (011) Si with application of in-plane 2 11 1⁄2 uniaxial stress to magnitude of 0.9 0.1 GPa were studied. Tensile stresses did not appreciably change the growth velocity compared with the stress-free case, whereas compression tended to retard the growth velocity to approximately one-half the stress-free value. The results are explained usin...

GaN films have been grown at 1050 8C on porous silicon (PS) substrates by metalorganic vapour phase epitaxy. The annealing phase of PS has been studied in temperature range from 300 to 1000 8C during 10 min under a mixture of ammonia (NH3) and hydrogen (H2). The PS samples were characterized after annealing by scanning electronic microscope (SEM). We observed that the annealing under the GaN gr...

Currently the trend in the Si IC industry is to produce epitaxial material layers by advanced growth and deposition techniques. Examples of these are Si and SiGe low temperature epitaxy, Si selective epitaxy and metallic silicide epitaxy. In order to obtain good electrical properties it is important that the epitaxial material shows no extended lattice defects and has a minimal concentration of...