ZnO thin films were prepared by RF magnetron sputtering method on SiO2/Si(111) substrate at different ratio of Ar/O2, which were annealed at different annealing temperatures to improve the films’ quality. The effects of the ratio of Ar/O2 and annealing treatment on the ZnO films’ properties were discussed. The crystal structures and surface morphologies of ZnO thin films were characterized by X...

zno thin films were deposited on si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°c). dependence of the crystallographic structure, nano-strain, chemical composition and surface physical morphology of these layers on annealing temperature were studied. the crystallographic structure of films was studied using x-ray diffracti...

ZnO, Al-doped ZnO (AZO), and Ga-doped ZnO (GZO) semiconductor thin films were deposited on glass substrates via a sol-gel spin-coating process for application in a photoconductive ultraviolet (UV) detector. The doping concentrations of Al and Ga were 1.0 at % in the precursor solutions. In this study, the microstructural features and the optical and electrical properties of sol-gel-derived ZnO,...

Epitaxial m-plane ZnO thin films have been deposited on m-plane sapphire substrates at a low temperature of 200°C by atomic layer deposition. A 90° in-plane rotation is observed between the m-plane ZnO thin films and the sapphire substrates. Moreover, the residual strain along the ZnO [-12-10] direction is released. To fabricate metal-insulator-semiconductor devices, a 50-nm Al2O3 thin film is ...

ZnO thin films with grain morphology were obtained over glass substrates using the sol–gel method; these films were used as substrates to grow ZnO nanorods using chemical bath deposition (CBD) technique. The transmittance percentage of two films was over 85% and the electrical resistivity decreased when ZnO nanorods were grown over the ZnO thin film with grain morphology. A laser is incident at...

ZnO thin films with significantly reduced band gaps were synthesized by doping N and codoping Al and N at 100 C. All the films were synthesized by radiofrequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that codoped ZnO: (Al,N) thin films exhibited significantly enhanced crystallinity compared with ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermor...

Al-doped ZnO (AZO) thin films with various Al concentrations were synthesized on Si(001) substrates with native oxide layers by atomic layer deposition process. The effects of the Al concentration on the microstructural characteristics of the AZO thin films grown at 250 degrees C and the correlation between their microstructural characteristics and electrical properties of the AZO thin films we...

Zinc Oxide (ZnO) has attracted interest due to its potential applications including nonlinear optical devices, blue‐violet emission device, buffer layer for GaN‐based devices, visible‐range transparent electrodes for solar cell and flat panel displays, surface acoustic wave devices, piezoelectric and piezo‐ optic devices, gas sensors for oxygen, and integrated opt...

ZnO is a promising material suitable for variety of novel electronic applications including sensors, transistors, and solar cells. Intrinsic ZnO film has inferiority in terms of electronic properties, which has prompted researches and investigations on doped ZnO films in order to improve its electronic properties. In this work, aluminum (Al) doped ZnO (AZO) with various concentrations and undop...