We present results on the in situ, two-dimensional growth sas opposed to the more commonly encountered island-coalescence mechanismd of continuous epitaxial Cu2O films on MgOs011d using dc facing-magnetron sputtering from metallic Cu targets in an oxygen/argon atmosphere. Film growth was studied as a function of deposition time and the dc power applied to the guns. Control of the latter leads t...

Combination of an oxide semiconductor with a highly conductive nanocarbon framework (such as graphene or carbon nanotubes) is an attractive avenue to assemble efficient photoelectrodes for solar fuel generation. To fully exploit the possible synergies of the hybrid formation, however, precise knowledge of these systems is required to allow rational design and morphological engineering. In this ...

A combination of electron microscopy, focused ion beam and conductive atomic force microscopy techniques have been used to study the microstructure, oxide scale development, and electrical behavior of a Cu–9 at.% La alloy. The as-cast alloy exhibits a eutectic microstructure comprising 30 vol.% Cu rods in a Cu6La matrix. The eutectic colonies exhibit a singular orientation relationship with [01...

Laminar Cu2O growth on (111) Cu singlecrystal surfaces J. Vac. Sci. Technol. 15, 656 (1978); 10.1116/1.569658 Surface and Bulk Conductivities of Cu2O Single Crystals J. Appl. Phys. 41, 271 (1970); 10.1063/1.1658333 Redistribution subject to AVS license or copyright; see http://scitation.aip.org/termsconditions. Download to IP: 128.173.125.76 On: Fri, 09 May 2014 18:13:09 Methanol decomposition ...

We studied the reduction of CuO(111) surface using density functional theory (DFT) with the generalized gradient approximation corrected for on-site Coulomb interactions (GGA + U) and screened hybrid DFT (HSE06 functional). The surface reduction process by oxygen vacancy formation and H2 adsorption on the CuO(111) surface is investigated as two different reduction mechanisms. It is found that b...

To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(ii), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).

In this study, the effect of annealing temperature on material properties and structural cuprous oxide was studied in order to investigate how affects properties, varied between 200℃, 300℃, 400℃ 500 ℃ unannealed. The physical were measured by X-ray diffraction (XRD). XRD patterns showed that Cu2O nanoparticles highly pure, crystalline, nano-sized. From results, we found pure cuprite (Cu2O) phas...