The quantum-confined stark effect induced by polarization has significant effects on the optical properties of nitride heterostructures. In order to improve the emission efficiency of GaN/AlN quantum dots [QDs], a novel epitaxial structure is proposed: a partially relaxed GaN layer followed by an AlN spacer layer is inserted before the growth of GaN QDs. GaN/AlN QD samples with the proposed str...

Ever since Gallium Nitride based high electron mobility transistor (HEMT) operation was demonstrated (Khan, 1993), there is a tremendous interest in the design and growth of GaN based transistors for high power device applications. The nitride semiconductors have wide application in the fields of high electron mobility transistors (HEMTs), light emitting diodes, and various high power electroni...

Generative moment matching network (GMMN) is a deep generative model that differs from Generative Adversarial Network (GAN) by replacing the discriminator in GAN with a two-sample test based on kernel maximum mean discrepancy (MMD). Although some theoretical guarantees of MMD have been studied, the empirical performance of GMMN is still not as competitive as that of GAN on challenging and large...

Highly-efficient GaN-based light-emitting diode (LED) wafers have been grown on La 0.3 Sr 1.7 AlTaO6 (LSAT) substrates by radio-frequency molecular beam epitaxy (RF-MBE) with optimized growth conditions. The structural properties, surface morphologies, and optoelectronic properties of as-prepared GaN-based LED wafers on LSAT substrates have been characterized in detail. The characterizations ha...

Giant axonal neuropathy (GAN) results from autosomal recessive mutations (gan-) that affect cytoskeletal organization; specifically, intermediate filaments (IFs) are found collapsed into massive bundles in a variety of different cell types. We studied the gan- fibroblast lines WG321 and WG139 derived from different GAN patients. Although previous studies implied that the gan- IF phenotype was c...

Gallium Nitride (GaN) HEMTs are the focus of intense research and development due to their potential for the realization of MMIC power amplifiers (PAs) with high gain and record levels of power delivery [1]. Much of the work in GaN HEMT development has been concentrated on performance demonstration on 2” SiC and Sapphire substrates. Multiple groups have demonstrated GaN HEMTs delivering record ...

We report the development of 520–540 nm green light emitting diodes LEDs grown along the nonpolar a axis of GaN. GaInN /GaN-based quantum well structures were grown in homoepitaxy on both, a-plane bulk GaN and a-plane GaN on r-plane sapphire. LEDs on GaN show higher, virtually dislocation-free crystalline quality and three times higher light output power when compared to those on r-plane sapphi...

M-plane GaN(1 1 00) is grown by plasma assisted molecular beam epitaxy on ZnO(1 1 00) substrates. A low-temperature GaN buffer layer is found to be necessary to obtain good structural quality of the films. Well oriented (1 1 00) GaN films are obtained, with a slate like surface morphology. On the GaN(1 1 00) surfaces, reconstructions with symmetry of c(2x2) and approximate "4×5" are found under...

Taking advantage of strong 4-photon absorption of l e v light in GaN samples, we demonstrated the fmt ever 4-photon microscopy using GaN material system. Combining with 3-photon fluorescence and second and third harmonic generation microscopies, we studied a lateral overgrown GaN sample with high 3D resolution. Complete information regarding the distribution of growth quality, defect state, and...