نتایج جستجو برای: 308 nm excimer laser

تعداد نتایج: 303085  

Journal: :Investigative ophthalmology & visual science 1989
R N Gaster P S Binder K Coalwell M Berns R C McCord N L Burstein

The 193 nm argon fluoride excimer laser was used to ablate a 6 mm diameter area of the central rabbit cornea under various conditions of power, beam configuration and exposure time. High repetition rates or prolonged exposures produced charring and prevented rapid epithelial wound closure. Endothelial vacuolization, reduction in density, and displacement of cell material into Descemet's layer r...

Journal: :Journal of refractive surgery 2004
Alexander V Doga Alexander A Shpak Victor A Sugrobov

PURPOSE To perform a quantitative evaluation of smoothness of ablation on polymethylmethacrylate (PMMA) using four scanning excimer lasers available commercially for photorefractive surgery. METHODS Ablations were done on PMMA plates with dimensions 100 x 50 x 1 mm. Four scanning excimer lasers were used, two with flying spot technology (Zeiss-Meditec MEL-70, and a Russian-made unit, Microsca...

2004
Marcel Guillong

Laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) is one of the most successful direct solid sampling techniques for major, minor and trace element analysis. However, this technique still suffers from matrix dependent ablation characteristics, which makes quantification very difficult. Furthermore, the laser sampled material alters its composition from the sample to the de...

2000
L. Feenstra H. M. J. Bastiaens P. J. M. Peters W. J. Witteman

An X-ray preionised, discharge excited ArF excimer laser, = 193 nm, has been studied in the long pulse regime. The laser performance is found to be primarily dependent on the discharge stability, and therefore, on the gas composition, preionization timing and the pumping power. Using X-ray preionization and prepulse-mainpulse excitation, laser pulselengths of up to 120-ns full-width at half-max...

2015
T. S. Iwayama T. Hama

Si ion implantation was widely used to synthesize specimens of SiO2 containing supersaturated Si and subsequent high temperature annealing induces the formation of embedded luminescent Si nanocrystals. In this work, the potentialities of excimer UV-light (172 nm, 7.2 eV) irradiation and rapid thermal annealing (RTA) to enhance the photoluminescence and to achieve low temperature formation of Si...

Journal: :Optics express 2006
Sanna Yliniemi Jacques Albert Qing Wang Seppo Honkanen

High reflectivity Bragg gratings have been written by ArF excimer laser through a phase mask into IOG-1 hybrid phosphate glass. After grating exposure, a waveguide was fabricated by silver-sodium ion-exchange. Reflectivities around 80% at a wavelength of ~ 1535 nm were measured from the waveguide for both quasi-TE and -TM polarizations. Waveguide laser operation with the photowritten waveguide ...

Journal: :The Journal of chemical physics 2014
Mica C Smith Wei-Lun Ting Chun-Hung Chang Kaito Takahashi Kristie A Boering Jim Jr-Min Lin

The UV spectrum of CH3CHOO was measured by transient absorption in a flow cell at 295 K. The absolute absorption cross sections of CH3CHOO were measured by laser depletion in a molecular beam to be (1.06 ± 0.09) × 10(-17) cm(2) molecule(-1) at 308 nm and (9.7 ± 0.6) × 10(-18) cm(2) molecule(-1) at 352 nm. After scaling the UV spectrum of CH3CHOO to the absolute cross section at 308 nm, the peak...

2014
Tien-Fu Chen Ching-Fa Yeh Jen-Chung Lou

Articles you may be interested in Anomalous hot-carrier-induced degradation of offset gated polycrystalline silicon thin-film transistors Appl. Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors Appl. Erratum: " Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors " [J. Effect of ...

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