نتایج جستجو برای: aluminum doped zno azo

تعداد نتایج: 118772  

2017
Dan Sun Changlong Tan Xiaohua Tian Yuewu Huang

Transparent anodes are indispensable components for optoelectronic devices. Two-dimensional (2D) materials are attracting increasing research interest due to their unique properties and promising applications. In order to design novel transparent anodes, we investigated the electronic, optical, and electrical properties of 2D ZnO monolayers doped with Al, Ga, and In using the first-principles c...

2012
Ji Sun Park Ju Min Lee Sun Kak Hwang Sun Hwa Lee Hyun-Jung Lee Bo Ram Lee Hyung Il Park Ji-Seon Kim Seunghyup Yoo Myoung Hoon Song Sang Ouk Kim

Metal oxide charge transport layers are widely used to promote the interfacial charge transport of organic optoelectronics. Nevertheless, frequently used wide-bandgap metal oxides with low electrical conductivities reveal inherent limitations in the charge transport enhancement. We present the remarkable electro-conductivity enhancement of solution processable ZnO charge transport layers upon d...

2017
Xiaoqing Chen Zhansheng Wu Zhenzhen Gao Bang-Ce Ye

In order to enhance the photodegradation of methyl orange (MO) by ZnO under visible light irradiation, ZnO nanoparticles co-doped with Ag and N and supported on activated carbon (AC) with different properties were synthesized through the sol-gel method. The prepared photocatalysts were characterized in terms of the structure and properties through X-ray diffraction, N₂ adsorption-desorption, ul...

Journal: :Nanoscale 2014
Geun Chul Park Soo Min Hwang Jun Hyung Lim Jinho Joo

The incorporation of foreign elements into ZnO nanostructures is of significant interest for tuning the structure and optical and electrical properties in nanoscale optoelectronic devices. In this study, Ga-doped 1-D ZnO nanorods were synthesized using a hydrothermal route, in which the doping content of Ga was varied from 0% to 10%. The pn heterojunction diodes based on the n-type Ga-doped ZnO...

2013
Hongfeng Duan Haiping He Luwei Sun Shiyan Song Zhizhen Ye

Indium-doped ZnO nanowires have been prepared by vapor transport deposition. With increasing In content, the growth orientation of the nanowires switches from [101_0] to infrequent [022_3] and the surface becomes rough. No surface-related exciton emission is observed in these nanowires. The results indicate that large surface-to-volume ratio, high free electron concentration, and low density of...

Co-doped ZnO nanoparticles with different Cobalt contents were prepared by direct precipitation method. The materials were characterized by XRD, SEM and TEM techniques. The XRD results indicated that the particle size of pure ZnO and Co-doped ZnO is about 30-45nm. The toxic Cr(VI) in industrial wastewaters can be removed by a reduction from Cr(VI) to Cr(III). The reduction of Cr(VI) to Cr(III) ...

2014
Shou-Yi Kuo Jui-Fu Yang Fang-I Lai

This study investigated the influence of ZnO nanostructures on dye adsorption to increase the photovoltaic conversion efficiency of solar cells. ZnO nanostructures were grown in both tree-like and nanorod (NR) arrays on an AZO/FTO film structure by using a hydrothermal method. The results were observed in detail using X-ray diffraction, field-emission scanning electron microscopy (FE-SEM), UV-v...

Journal: :Japanese Journal of Applied Physics 2022

Abstract We fabricated inorganic–organic hybrid quantum-dot light-emitting-diodes (QD-LEDs) consisting of several types solution-processed n-type oxide electron injection layers (EILs)/quantum-dot (QD) and poly (9-vinylcarbazole) (PVK) blend light emitting layer (EMLs)/4,4-bis(carbazole-9yl)bihpheyl (CBP)/a-NPD/1,4,5,8,9, 11-hexaazatriphenylene-hexacarbonitrile (HAT-CN) hole layer/Al structures...

2012
Chang Oh Kim Dong Hee Shin Sung Kim Suk-Ho Choi K. Belay R. G. Elliman

Related Articles Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile Appl. Phys. Lett. 99, 262102 (2011) Doping profile of InP nanowires directly imaged by photoemission electron microscopy Appl. Phys. Lett. 99, 233113 (2011) Hafnium-doped GaN with n-type electrical resistivity in the 104cm range Appl. Phys. Lett. 99, 202113 (2011)...

2012
Mohammed Benali Kanoun Souraya Goumri-Said Udo Schwingenschlögl Aurélien Manchon

We investigate the zinc vacancy effects on the electronic structures and magnetic properties of Sc-doped ZnO, by performing first-principles calculations within both GGA + U and Heyd–Scuseria–Ernzerhof hybrid functional methods. We find that Sc impurities stabilize considerably Zn vacancies. The electronic and magnetic analysis shows a half metallic ferromagnetic character with a total magnetic...

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