نتایج جستجو برای: analytical approach to model transistors
تعداد نتایج: 11292295 فیلتر نتایج به سال:
Bipolar junction transistors (BJTs) are active semiconductor devices commonly used for amplification and switching applications. In this study, transistors have been biased to operate in active region and by measuring the electrical characteristics of BJTs, the effect of gamma irradiation on each of these characteristics was investigated before and after the gamma irradiation by 60Co source. In...
multiple coupled circuit modeling of squirrel-cage induction motors, or winding function approach is the most detailed and complete analytical model used to analyze the performance of the faulty induction motors. this paper extends the above-mentioned model to a saturable model including variable degrees of the saturation effects using an appropriate air gap function and novel techniques for lo...
Monitoring the binding affinities and kinetics of protein interactions is important in clinical diagnostics and drug development because such information is used to identify new therapeutic candidates. Surface plasmon resonance is at present the standard method used for such analysis, but this is limited by low sensitivity and low-throughput analysis. Here, we show that silicon nanowire field-e...
the main purpose of this research was to:1.develop a coking model for thermal cracking of naphtha.2.study coke inhibition methods using different coke inhibitors.developing a coking model in naphtha cracking reactors requires a suitable model of the thermal cracking reactor based on a reliable kinetic model.to obtain reliable results all these models shall be solved simultaneously.for this pu...
Generally, bipolar transistors have better performance than MOS transistors if higher transconductances for the same operating point or higher transition frequencies are required. On the other hand, compared to MOS transistors, bipolar transistors often have limited use in the design of VCO’s, due to a limited voltage swing across the resonator and therefore limited phase-noise performance. How...
This research investigates the use of vertical silicon ungated field effect transistors (FETs) as current limiters to individuallycontrol emission current in a field emitter and provide a simple solution to three problems that have plagued field emission arraysemission current uniformity, emission current stability and reliability. The ungated FET is an high aspect ratio silicon pillar individu...
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