نتایج جستجو برای: annealing temperature
تعداد نتایج: 473032 فیلتر نتایج به سال:
Samples examined in this experimental work were in the form of hexagonal barium ferrite with various temperatures annealing. Barium hexaferrite (BaFe12O19), is of great importance as permanent magnets, particularly for magnetic recording as well as in microwave devices. The variation of the temperatures annealing was found to affect coercivity, mean effective anisotropy field, magnetic viscosit...
The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from ...
This thesis describes the synthesis of yttrium oxide nanoparticles in an AOT/isooctane reverse micelle solution. Two synthetic methods are compared. First is the precipitation reaction between yttrium nitrate and ammonia, second is the hydrolysis of yttrium isopropoxide. The effects of annealing of the resulting the yttrium oxide nanoparticles are also described. The nitrate method produced net...
Electrical, structural and morphological properties of Ni silicide films formed in Ni(Pt 4at.% )/Si(100) and Ni0.6Si0.4(Pt4at.% )/Si(100) structures at various annealing temperatures ranging from 200 to 1000 oC were studied. The Ni(Pt) and Ni0.6Si0.4(Pt) films with thickness of 15 and 25 nm were deposited by RF magnetron co-sputtering method, respectively. The annealing process of the structur...
In-situ annealing at a high temperature of 640°C was performed for a low temperature grown Si capping layer, which was grown at 300°C on SiGe self-assembled quantum dots with a thickness of 50 nm. Square nanopits, with a depth of about 8 nm and boundaries along 〈110〉, are formed in the Si capping layer after annealing. Cross-sectional transmission electron microscopy observation shows that each...
We present the results of the characterization of Mg/Co periodic multilayers and their thermal stability for the EUV range. The annealing study is performed up to a temperature of 400°C. Images obtained by scanning transmission electron microscopy and electron energy loss spectroscopy clearly show the good quality of the multilayer structure. The measurements of the EUV reflectivity around 25 n...
The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to ob...
Post-deposition annealing effects on nanomechanical properties of granular TiO2 films on soda-lime glass substrates were studied. In particular, the effects of Na diffusion on the films' mechanical properties were examined. TiO2 photocatalyst films, 330 nm thick, were prepared by dip-coating using a TiO2 sol, and were annealed between 100 °C and 500 °C. Film's morphology, physical and nanomecha...
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