In this experimental work, by using the method of plasma-chemical etching, we have dealt with the causes of the creation of a distorted layer on the surface of silicon wafers during mechanical machining processes, in addition, the elucidation of connections between the structure of this layer and characteristic parameters of the mechanical strength of these wafers have been studied. Experimenta...

Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a cert...

Femtosecond laser micromachining is becoming an established technique for the fabrication of complex three-dimensional structures in glass. The combination writing and chemical etching increases versatility by allowing hollow within bulk material. possibility to encompass both optical fluidic components a single substrate allows us realize optofluidic devices usable several application fields. ...

A generic process for the preparation of curved silicon nanowires (SiNWs) with ribbon-like cross sections was developed. The present synthetic approach is based on chemical etching of (100)-oriented silicon wafers in mixture solutions of HF and H(2)O(2) by using patterned thin gold films as catalyst and provides a unique opportunity for the fabrication of extended arrays of zigzag SiNWs, ultrat...

We demonstrated a novel, simple, and low-cost method to fabricate silicon nanowire (SiNW) arrays and silicon nanohole (SiNH) arrays based on thin silver (Ag) film dewetting process combined with metal-assisted chemical etching. Ag mesh with holes and semispherical Ag nanoparticles can be prepared by simple thermal annealing of Ag thin film on a silicon substrate. Both the diameter and the distr...

Lines of TiSi, were written on Si(100) substrates by using a focused Ar+-laser. The reaction gas mixture consisted of TiCl, and H, and the substrate was used a s the silicon source. The laser deposited TiSi, lines were examined as a function of the deposition parameters. Especially the initial reactions have been studied b varying the the writing speed in a wide range. The C-54 phase of TiSi, w...