A series of molecular gallium compounds were analyzed using X-ray photoelectron spectroscopy (XPS). Specifically, the Ga 2p3/2 and Ga 3d5/2 photoelectron binding energies and the Ga L3M45M45 Auger electron kinetic energies of compounds with gallium in a range of assigned oxidation numbers and with different stabilizing ligands were measured. Auger parameters were calculated and used to generate...

The room temperature adsorption of NaO on the clean Si(OO1)2 X 1 surface was used as a model system in an Auger electron spectroscopy (ARSJ study presented in this paper. Earlier experimental and recent theoretical work have provided evidence that this reaction evolves in discernible stages each exhibiting different adsorption geometries for the oxygen atom. In this AES study the intensity rati...

Angle resolved-Auger photoelectron coincidence spectroscopy (AR-APECS) has been exploited to investigate the role that electron correlation plays in exchange-coupling at ferromagnetic/antiferromagnetic interface of a Fe/CoO bilayer grown on Ag(001). The effective energy Ueff, usually employed assess distribution core-valence-valence Auger spectra, experimentally determined for each possible com...

The growth and interdiffusion of Ti and Ni on a Mo( 110) surface have been studied by Auger electron spectroscopy (AES), low energy electron diffraction (LEED) and temperature programmed desorption spectroscopy (TPD). Ti grows layer-by-layer upon deposition on MO{ 110) at 115 K, whereas annealing multifaye~ of Ti to 900 K causes formation of Ti three-dimensional clusters. Submonolayer Ti on Mo(...

The surface structure and electronic properties of ultrathin MgO layers grown on epitaxial Fe(110) films were investigated at room temperature by means of electron diffraction, Auger electron spectroscopy, scanning tunneling microscopy, and spin-resolved photoelectron spectroscopy. The spin polarization at the Fermi level (EF) of the Fe(110) film decreases sharply with increasing thickness of t...

DNA sequencing by imaging in an electron microscope is an approach that holds promise to deliver long reads with low error rates and without the need for amplification. Earlier work using transmission electron microscopes, which use high electron energies on the order of 100 keV, has shown that low contrast and radiation damage necessitates the use of heavy atom labeling of individual nucleotid...

* The work is supported by the U.S. Department of Energy, Office of Basic Energy Sciences under contract No. W-31-109-ENG-38. † [email protected] Abstract The property of the TiN/vacuum interface in ultrahigh vacuum and under electron beam irradiation is studied using Auger electron spectroscopy. About one monolayer of oxygen adsorbs on the surface and metal oxidation occurs. The characteristi...

Direct and inverse Auger scattering are amongst the primary processes that mediate the thermalization of hot carriers in semiconductors. These two processes involve the annihilation or generation of an electron-hole pair by exchanging energy with a third carrier, which is either accelerated or decelerated. Inverse Auger scattering is generally suppressed, as the decelerated carriers must have e...