Abstract A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch approximately 100 μm. Three analog were calibrated laboratory radioactive sources and tested 180 GeV/c pion beamline at CERN SPS. detection efficiency (99.9 -0.2 +0.1 )% was measured together time resolution (...

This article presents an innovative implementation of the plus-type second-generation current conveyor (CCII+) using BiCMOS technology, which combines benefits bipolar and CMOS technologies. The optimization problem minimizing X-port input resistance maximizing cut-off frequency value was solved genetic algorithm (GA). proposed approach allows CCII+ to achieve better performance compared previo...

In this paper a novel opto-electronic Track-and-Hold Amplifier (OE-THA) is presented. The OE-THA can be used as sampler in photonic analog-to-digital-converter (ADC). It fabricated silicon 250 nm SiGe BiCMOS technology to allow for monolithic integration of and electronic components. chip exhibits small signal bandwidth over 65 GHz, total harmonic distortion below −34 dB up 75 GHz signal-to-noi...

A design method of low-pass (LP) negative group delay (NGD) integrated circuit (IC) implemented in 130-nm BiCMOS technology is investigated. The LP-NGD composed by RL-network with high Ohmic unsalicided N+poly resistor and symmetrical current spiral inductor. methodology the investigated explained chip layout process. Then, pre-simulation performed rule check (DRC) 225 μm × 215 versus schematic...

Frequency-modulated continuous-wave (FMCW) radars necessitate fast frequency modulation. However, finite loop bandwidth of a phase-locked (PLL) limits the accuracy This paper proposes phase compensation (PC) technique to address this limitation. The synthesizer PLL with PC realizes and precise triangular chirp modulation by adding compensating square wave before integral path filter. is designe...

The working frequencies of telecommunication systems are rapidly increasing and sub-THz applications will soon be required. In that context, the current article presents synthesis a tunable ring filter. considered filter introduces new degree freedom allows to meet targeted specifications in terms central frequency bandwidth. Thanks capacitor displacement, equivalent characteristic impedance ca...

This paper presents a compact 24‒32 GHz high-linearity broadband, fully integrated amplifier which is designed in 130-nm SiGe (BiCMOS). The principle of improving the linearity degeneration inductor and effect driving stage on are analyzed. To achieve flat transformer also used inter-stage matching. Output matching for low insertion loss networks has been selected carefully. demonstrates small ...