نتایج جستجو برای: chemical deposition

تعداد نتایج: 454324  

2001
Jan Schmidt Mark Kerr Andrés Cuevas

Two different techniques for the electronic surface passivation of silicon solar cells, the plasma-enhanced chemical vapour deposition of silicon nitride (SiN) and the fabrication of thin thermal silicon oxide/plasma SiN stack structures, are investigated. It is demonstrated that, despite their low thermal budget, both techniques are capable of giving an outstanding surface passivation quality ...

2004
M. G. Hussein A. Driessen

Low refractive index Silicon Oxynitride (SiON) layers were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) using SiH4/N2 and N2O. At an index less than 1.473 the as-deposited layers appeared to be unstable in time and sensitive to moisture as could be observed by a spectroscopic ellipsometer. The stability, probably due to partly open structures, could be improved by deposition a...

2007
D. Soubane G. Nouet

High quality Cadmium Sulphide thin films were grown on directly heated substrates of commercial glass by means of Modified Chemical Bath Deposition. Structural and optical properties of the obtained films were achieved. The impact of heat treatment in air at 450°C for one hour reveals the apparition of nano films of Cadmium Oxide on the surface of these buffer layers, which decreases dramatical...

2017
Jin Xie Lei Liao Yongji Gong Yanbin Li Feifei Shi Allen Pei Jie Sun Rufan Zhang Biao Kong Ram Subbaraman Jake Christensen Yi Cui

Defects are important features in two-dimensional (2D) materials that have a strong influence on their chemical and physical properties. Through the enhanced chemical reactivity at defect sites (point defects, line defects, etc.), one can selectively functionalize 2D materials via chemical reactions and thereby tune their physical properties. We demonstrate the selective atomic layer deposition...

2015
Yoshiyuki Suda Koji Maruyama Tetsuo Iida Hirofumi Takikawa Kazuki Shimizu Yoshito Umeda Daniele Gozzi

Carbon nanocoil (CNC), which is synthesized by a catalytic chemical vapor deposition (CCVD) method, has a coil diameter of 300–900 nm and a length of several tens of μm. Although it is very small, CNC is predicted to have a high mechanical strength and hence is expected to have a use in nanodevices such as electromagnetic wave absorbers and field emitters. For nanodevice applications, it is nec...

2011
T. S. Santra T. K. Bhattacharyya F. G. Tseng T. K. Barik

Diamond-like nanocomposite (DLN) thin films were deposited on pyrex glass or silicon substrate by plasma enhanced chemical vapor deposition (PECVD) method. These types of films have their unique number of structural, mechanical and tribological properties, which are quite similar with MEMS material properties. DLN films provide a number of unique and

2006
R. I. Badran

The steady-state photocarrier grating (SSPG) technique has been employed to investigate the field dependence of different polymorphous and microcrystalline silicon samples prepared by plasma enhanced chemical vapor deposition technique. The field-dependent experimental data at different temperatures are analyzed using two different approaches based on the small-signal photocurrent to extract mo...

2006
Ming Chang Jen-Cheng Chen Jia-Sheng Heh

The principal object of this paper is to develop a neural network model, which can simulate the plasma enhanced chemical vapor deposition (PECVD) process in TFT-Array procedure. Then the Boolean logic rules are extracted from the trained neural network in order to establish a knowledge base of expert system. The input data of neural network was collected form the process parameters of PECVD mac...

2011
L. Xu Z. P. Li C. Wen W. Z. Shen

We have performed a detailed structural and optical investigation of hydrogenated nanocrystalline silicon (nc-Si:H) thin films prepared by plasma-enhanced chemical vapor deposition. The microstructural properties of these thin films are characterized and interpreted physically based on the growth mechanism. Infrared spectroscopy reveals that the bonded hydrogen in a platelet-like configuration,...

2001
R. Platz

Microcrystalline silicon (μc-Si:H) of truly intrinsic character can be deposited by plasmaenhanced chemical vapor deposition (PECVD) when dichlorosilane (SiH2Cl2) is added to the SiH4-H2 source gas. A dark-conductivity of 5·10 -8 S/cm, activation energy of 0.62 eV and photoconductivity of 1·10 S/cm are obtained. The optical bandgap for this material is approximately 1.1 eV. No special gas purif...

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