نتایج جستجو برای: chemical vapour deposition

تعداد نتایج: 460703  

Journal: :Journal of nanoscience and nanotechnology 2012
J R Castro Smirnov Eric Jover Roger Amade Gemma Gabriel Rosa Villa Enric Bertran

In this work a methodology to fabricate carbon nanotube based electrodes using plasma enhanced chemical vapour deposition has been explored and defined. The final integrated microelectrode based devices should present specific properties that make them suitable for microelectrode arrays applications. The methodology studied has been focused on the preparation of highly regular and dense vertica...

2005
X Y Tao G Van Tendeloo

A series of novel one-dimensional carbon nanomaterials have been synthesized on an alkali-element-modified Cu catalyst, via a simple chemical vapour deposition method. The alkali-element doping of the Cu catalyst plays a key role in the controllable synthesis of carbon nanomaterials, signifying a novel approach to modifying the Cu catalyst. Owing to their unique morphology and fine quality, the...

2005
S. Faÿ

Doped ZnO layers deposited by Low Pressure Chemical Vapour Deposition technique have been studied for their use as transparent contact layers for thin-film silicon solar cells. The effect of a variation in the doping level of the front LP-CVD ZnO on solar cell performance is investigated. Based on these experimental results, authors propose to evaluate the effect of the different ZnO layer prop...

2017
D. Dorignac S. Schamm Ch. Grigis J. Santiso G. Garcia A. Figueras

This paper is concerned with high-T, superconducting compounds produced by metal-organic chemical vapour deposition. The nanostructure of different types of interfaces yttria stabilized zirconia buffer / (l-102)-sapphire substrate, YBazCu307-, film / Y2O3 precipitates as well as YBa2Cu307-, film / (001)-NdGa03, -SrTiO3, and -MgO substrates has been investigated by high resolution electron micro...

2018
Vineet Sivadasan Stephen Rhead David Leadley Maksym Myronov

Formation of Kirkendall voids is demonstrated in the Ge underlayer of reverse step graded Si1−xGex/Ge buffer layers grown on Si(001) using reduced pressure chemical vapour deposition (RP-CVD). This phenomenon is seen when the constant composition Si1−xGex layer is grown at high temperatures and for x„0.7. The density and size of the spherical voids can be tuned by changing Ge content in the S...

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