A active inductor in CMOS techonology with a supply voltage of 1.8V is presented. The value of the inductance L can be in the range from 0.12nH to 0.25nH in high frequency(HF). The proposed active inductor is designed in TSMC 0.18-um CMOS technology. The power dissipation of this inductor can retain constant at all operating frequency bands and consume around 20mW from 1.8V power supply. Induct...

This paper analyses two front-end receiver architectures intended for GSM900 use; (i) A direct-conversion receiver, and (ii) a low-IF receiver using a poly-phase filter. The aim is to determine the circuit performance required for GSM operation and to compare this to current state-of-the-art CMOS performance. The analysis shows that direct-conversion receivers fail to meet specifications when b...

There have recently been more and more reports on CMOS integrated circuits operating at terahertz (≥ 0.1THz) frequencies. However, design environments and techniques are not as well established as for RF CMOS circuits. This paper reviews recent progress made by the authors in terahertz CMOS design for low-power and high-speed wireless communication, including device characterization and modelin...

Computer-aided design (CAD) tools are frequently employed to verify the design objectives before the fabrication of an integrated circuit. An important circuit parameter that requires accurate characterization is the power consumption due to the strict constraints on the acceptable power envelope of integrated systems. Circuit simulators typically provide built-in functions to measure the power...

Progress in CMOS device technology has motivated the design of high-performance analog integrated circuits in standard CMOS processes. In particular, the high speed of submicron CMOS devices make them attractive for a variety of analog applications, including data converters, switched capacitor circuits, and low noise amplifiers [1,2,16]. However, recent reports have indicated that the measured...

Direct tunneling current through the gate oxide is becoming a significant component of transistor leakage in deep sub-micron technology. This paper studies how gate leakage impacts the performance of analog CMOS ICs for the 90nm node. Results show that in DC referencing circuits such as current mirrors, a tradeoff exists between transistor width and mirrored reference current to improve accurac...

Abstract  In his paper a new current-controlled conveyor (CCCII) in CMOS technology is presented. It features, low supply voltage (±0.7), low power consumption, low circuit complexity, rail to rail operation and wide range parasitic resistance ( ). The circuit has been successfully employed in a multifunction biquad filter. Simulation results by HSPICE show high performance of the circuit and c...

The explosive development of wireless communication services creates a demand for more flexible and cost-effective communication systems that offer higher data rates. The obvious trend towards small-size and ultra low power systems, in combination with the ever increasing number of applications integrated in a single portable device, tightens the design constraints at hardware and software leve...

Silicon Readout Integrated Circuits (ROIC) for HgCdTe Focal Plane Arrays of 1x4 and 72x4 photovoltaic detectors are represented. The analog circuit blocks are completely identical for both, while the digital control circuit is modified to take into account the larger array size. The manufacturing technology is 0.35μm, double poly-Si, three-metal CMOS process. ROIC structure includes four elemen...

I. INTRODUCIION The first silicon retina, designed by Mead and Mahowald in the late 1980's [I], was an analog Very Large Scale Integration (aVLSI) system. The success of early Integrated Circuit (IC) implementations of biologically accurate neural circuits led to the exploration of many other computational systems, as well as work on development of silicon models of single neurons [2]. These aV...