Undoped and Mn-doped ZnO nanoparticles were successfully prepared by the hydrothermal method with different annealing temperature conditions. Structural, chemical and optical properties of the samples were studied by X-ray diffraction (XRD), Field Emission scanning electron microscopy (FESEM), UV-Vis spectrophotometry and Fourier transform infrared (FT-IR) spectroscopy. The phase purity was con...

Cu-doped ZnO nanorods have been grown at 90°C for 90 min onto a quartz substrate pre-coated with a ZnO seed layer using a hydrothermal method. The influence of copper (Cu) precursor and concentration on the structural, morphological, and optical properties of ZnO nanorods was investigated. X-ray diffraction analysis revealed that the nanorods grown are highly crystalline with a hexagonal wurtzi...

Solution-based ZnO nanorod arrays (NRAs) were modified with controlled N doping by an advanced ion implantation method, and were subsequently utilized as photoanodes for photoelectrochemical (PEC) water splitting under visible light irradiation. A gradient distribution of N dopants along the vertical direction of ZnO nanorods was realized. N doped ZnO NRAs displayed a markedly enhanced visible-...

Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of 3.37 eV, large exciton binding energy of 60 meV, and high optical gain of 320 cm at room temperature. Its luminescent properties have been intensively investigated for samples, in the for...

Doping ZnO with rare earth and 4d transition elements is a popular technique to manipulate the optical properties of ZnO systems. These systems may also possess intrinsic ferromagnetism due to their magnetic moment borne on 4f and 4d electrons. In this work, the structural, electronic, and magnetic properties of Eu- and Pd-doped ZnO were investigated by the ab initio density functional theory m...

An electrically pumped ZnO homojunction random laser diode based on nitrogen-doped p-type ZnO nanowires is reported. Nitrogen-doped ZnO nanowires are grown on a ZnO thin fi lm on a silicon substrate by chemical vapor deposition without using any metal catalyst. The p-type behavior is studied by output characteristics and transfer characteristic of the nanowire back-gated fi eld-effect transisto...

The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix has been examined on the atomic scale using a combination of high-resolution transmission electro...

p-type Sb-doped ZnO (ZnO:Sb)/n-type Ga-doped ZnO (ZnO:Ga) junctions were grown on c-plane sapphire substrates using plasma-assisted molecular-beam epitaxy. Mesa geometry light emitting diodes (LEDs) were fabricated using standard photolithography and lift-off process, with ohmic contacts achieved using Au/Ni and Au/Ti for top ZnO:Sb and bottom ZnO:Ga layers, respectively. Rectifying current–vol...

ZnO, Al-doped ZnO (AZO), and Ga-doped ZnO (GZO) semiconductor thin films were deposited on glass substrates via a sol-gel spin-coating process for application in a photoconductive ultraviolet (UV) detector. The doping concentrations of Al and Ga were 1.0 at % in the precursor solutions. In this study, the microstructural features and the optical and electrical properties of sol-gel-derived ZnO,...