In this work, bipolar resistive switching characteristics were demonstrated in the Pt/ZnO/Pt structure. Reliability tests show that ac cycling endurance level above 106 can be achieved. However, significant window closure takes place after about 102 dc cycles. Data retention characteristic exhibits no observed degradation after 168 h. Read durability shows stable resistance states after 106 rea...

1.1 Two-Dimensional exciton fine structure The spin properties of excitons in nanostructures are determined by their fine structure. Before analysing the exciton spin dynamics, we give first a brief description of the exciton states in quantum wells. We will mainly focus in this review on GaAs or InGaAs quantum well which are model systems. For more details, the reader is referred to the review...

The electrical transport property of the reduced graphene oxide (rGO) thin-films synthesized from defective GO through thermal treatment in a reactive ethanol environment at high temperature above 1000 °C shows a band-like transport with small thermal activation energy (Ea~10 meV) that occurs during high carrier mobility (~210 cm(2)/Vs). Electrical and structural analysis using X-ray absorption...

Transition metal dichalcogenides (TMDCs), such as MoS2 and WSe2, are free of dangling bonds and therefore make more "ideal" Schottky junctions than bulk semiconductors, which produce Fermi energy pinning and recombination centers at the interface with bulk metals, inhibiting charge transfer. Here, we observe a more than 10× enhancement in the indirect band gap photoluminescence of transition me...

Structural and electronic properties of pure In2O3 and its alloys with Sc, Y, La and Ac including the band gap, the effective mass and the effect of dopant ionic radius have been investigated using density functional theory (DFT). The full potential linearized augmented plane wave (FL-LAPW) method was used with the local density approximation (LDA+U). The calculated results indicated that, subs...

Pyrite (FeS2), being a promising material for future solar technologies, has so far exhibited in experiments an open-circuit voltage (OCV) of around 0.2 V, which is much lower than the frequently quoted 'accepted' value for the fundamental bandgap of ∼0.95 eV. Absorption experiments show large subgap absorption, commonly attributed to defects or structural disorder. However, computations using ...

Photoluminescence excitation spectroscopy (PLE) and high-resolution x-ray diffraction (HR-XRD) are used to characterize the structural electronic properties of high current density InGaAs/AlAs/InP resonant tunneling diode wafer structures. The non-destructive assessment these structures is challenging, with several unknowns: well barrier thickness, indium molar fraction, band-offsets, which a f...

Based on the energy-dispersion relation in each region of the gate-dielectric-silicon system, a tunneling model is developed to understand the gate current as a function of voltage and temperature. The gate capacitance is self-consistently calculated from Schrödinger and Poisson equations subject to the Fermi–Dirac statistics, using the same band structure in the silicon as used for tunneling i...

Photoinduced interfacial electron transfer (ET) from molecular adsorbates to semiconductor nanoparticles has been a subject of intense recent interest. Unlike intramolecular ET, the existence of a quasicontinuum of electronic states in the solid leads to a dependence of ET rate on the density of accepting states in the semiconductor, which varies with the position of the adsorbate excited-state...