The photoelectrochemical properties and stability of dye sensitized solar cells containing Mn(β-diketonato)3 complexes, [Mn(III)(acac)3] () (acac = acetylacetonate), [Mn(III)(CF2)3] () (CF2 = 4,4-difluoro-1-phenylbutanate-1,3-dione), [Mn(III)(DBM)3] () (DBM = dibenzoylmethanate), [Mn(II)(CF2)3]TBA (TBA = tetrabutylammonium) () and [Mn(II)(DBM)3]TBA (), have been evaluated. At room temperature, ...

A rectangular-waveguide output UTC-PD module integrating a HEMT power amplifier has been developed for operation in the 125-GHz band. The fabricated module exhibits maximum output power of more than 14 dBm with nearly flat frequency dependence in the 115-135GHz range. A 10-Gbit/s error-free wireless transmission at 125GHz with a minimum sensitivity of −34 dBm for a bit-error-rate of 10−12 is al...

In this work, we present a fully differential transimpedance amplifier (TIA) with controllable transimpedance for use in RF overlay downstream communication systems. The transimpedance amplifier has been designed in a standard 180-nm CMOS technology and it is intended for 47 MHz to 870 MHz subcarrier multiplexed RF signals. It performs a 18 dBΩ transimpedance gain control range for extended opt...

This letter presents an inductor-loaded 2:1 regenerative frequency divider operating up to 331.2 GHz in an InP HBT process, which, to the best of authors’ knowledge, is the fastest frequency divider reported thus far. On-wafer measurement shows that the divider is operating from 304.8 GHz to 331.2 GHz, with output power from 27 dBm to 12.3 dBm (no probe loss correction), while dissipating 85.5 ...

A dual RF-receiver preceded by discrete-step attenuators is implemented in 65nm CMOS and operates from 0.3– 1.0 GHz. The noise of the receivers is reduced by cross-correlating the two receiver outputs in the digital baseband, allowing attenuation of the RF input signal to increase linearity. With this technique a displayed average noise level below -169 dBm/Hz is obtained with +25 dBm IIP3, giv...

Photonic receivers integrating unitravelling carrier (UTC) photodiodes with high saturation power=high gain semiconductor optical amplifiers (SOAs) are presented. The SOAs demonstrated up to 28 dB of gain with saturation output powers of up to 18.6 dBm, while the UTC photodiodes were capable of 40 Gbit=s operation under high photocurrent operation. The chip-coupled receiver sensitivity was bett...

We introduce HD (or “Hierarchical-Deep”) models, a new compositional learning architecture that integrates deep learning models with structured hierarchical Bayesian models. Specifically we show how we can learn a hierarchical Dirichlet process (HDP) prior over the activities of the top-level features in a Deep Boltzmann Machine (DBM). This compound HDP-DBM model learns to learn novel concepts ...

In this paper, a D-band power amplifier (PA) based on 0.5-μm InP DHBT is presented. Wilkinson combiners with broadband stepped-impedance matching are used, and the eight-way PA is designed for wideband power performance. As input power is fixed at 3 dBm, the PA exhibits a saturated output power of 16.8 dBm and 7.9% PAE at 150 GHz with >45-GHz 3-dB power bandwidth from 125 GHz to 170 GHz. Meanwh...