Local structures around Mn in In12xMnxAs films grown by molecular-beam epitaxy have been studied by using Mn K-edge extended x-ray-absorption fine-structure ~EXAFS! technique. Substitution of Mn atoms for the In sites is found in samples either grown at low substrate temperatures ~near 200 °C! or with a low Mn concentration ~about 1 at. %!. This result represents a significant extension of an e...

semiconductor thin films Z. Yang, W. P. Beyermann, M. B. Katz, O. K. Ezekoye, Z. Zuo, Y. Pu, J. Shi, X. Q. Pan, and J. L. Liu Department of Electrical Engineering, Quantum Structures Laboratory, University of California, Riverside, California 92521, USA Department of Physics and Astronomy, University of California, Riverside, California 92521, USA Department of Materials Science and Engineering...

It is well known that the Curie temperature, and hence the magnetization, in diluted magnetic semiconductors (DMS) like Ga(1-x)Mn(x)As can be controlled by changing the equilibrium density of holes in the material. Here, we propose that even with a constant hole density, large changes in the magnetization can be obtained with a relatively small imbalance in the quasi-Fermi levels for up-spin an...

The magnetic susceptibility of the diluted magnetic Lu22xGdxO3 ~x50.06, 0.10, 0.22, 0.40, 1.00, 1.40, 1.80! was measured in the temperature range 1.7–295 K. The inverse susceptibility changes slope to a smaller value below 2.2 K for the samples with x<0.40. In the cubic Lu0.20Gd1.80O3 the slope increases below 2.8 K. These changes are attributed to the large difference in susceptibility for two...

Diluted ferromagnetic semiconductors combining and semiconducting properties in one material provide numerous new functionalities, attractive for basic studies potentially useful novel device applications. The tailoring of the electronic structure analogy to conventional has yet be explored. Here, we demonstrate conservation broken inversion symmetry band high-quality molecular-beam-epitaxy-gro...