ZnO structures with different dopants (1mol% Cr, Mn, Fe, Co, Cu and Ni) have been synthesized via a simple hydrothermal method using sucrose as a template. These doped ZnO nanostructures characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL). The photocatalytic property of these synthesized materials was studied by a pho...

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ZnO has become the focus of photonics and optoelectronic research. We prepared pure Mn(II) doped ZnO nanowires with a controlled reduction reaction by carbon in an asymmetrical tube. Careful time-resolved photoluminescence experimental study indicates three types of lasing mechanisms: exciton-exciton interaction, bipolaronic exciton condensation, and plasma; these exist in different ZnO nanowir...

Investigating the piezotronic effect in p-type piezoelectric semiconductor is critical for developing a complete piezotronic theory and designing/fabricating novel piezotronic applications with more complex functionality. Using a low temperature solution method, we were able to produce ultralong (up to 60 μm in length) Sb doped p-type ZnO nanowires on both rigid and flexible substrates. For the...

Polymeric biomaterials based on polyurethane and polylactide blends are promising candidates for regenerative medicine applications as biocompatible, bioresorbable carriers. In current research we showed that 80/20 polyurethane/polylactide blends (PU/PLDL) with confirmed biological properties in vitro may be further improved by the addition of ZnO nanoparticles for the delivery of bioactive zin...

A one-step electrochemical method based on sacrificial anode electrolysis (SAE) was used to deposit stabilized gold nanoparticles (Au NPs) directly on the surface of nanostructured ZnO powders, previously synthesized through a sol-gel process. The effect of thermal annealing temperatures (300 and 550 °C) on chemical, morphological, and structural properties of pristine and Au-doped ZnO nancompo...

Resistive random access memory (RRAM) is one of the most promising nonvolatile memory technologies because of its high potential to replace traditional charge-based memory, which is approaching its scaling limit. To fully realize the potential of the RRAM, it can be important to develop a unique device with current self-rectification, which provides a solution to suppress sneak current in cross...

Undoped and Al-doped ZnO films were synthesized by atomic layer deposition at 150°C and then annealed at 350°C in different atmospheres. Effects of doping and annealing on the film growth mode and properties were investigated. The undoped film has strong UV emission and weak Zn interstitial emission. Annealing introduces O vacancies, decreases Zn interstitials, and results in weakening and blue...

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We report a systematic investigation of the thermoelectric properties of n-type Ga-doped ZnO synthesized using different ball milling conditions. Samples fabricated by the high-energy ball milling resulted in a highly dense layered structure with randomly distributed voids. These samples measured the lowest room temperature thermal conductivity, i.e., 27 W/mK due to increased phonon scattering....