نتایج جستجو برای: electron backscatter diffraction
تعداد نتایج: 354379 فیلتر نتایج به سال:
Electron backscatter diffraction (EBSD) is becoming a widely used technique to determine crystallographic orientation in biogenic carbonates. Despite this use, there is little information available on preparation for the analysis of biogenic carbonates. EBSD data are compared for biogenic aragonite and calcite in the common blue mussel, Mytilus edulis, using different types of resin and thickne...
We have measured and reconstructed via forward modeling a small volume of microstructure of high purity, well annealed nickel using high energy xray diffraction microscopy (HEDM). Statistical distributions characterizing grain orientations, intra-granular misorientations, and nearest neighbor grain misorientations are extracted. Results are consistent with recent electron backscatter diffractio...
The twin distribution in topological insulators Bi2Te3 and Bi2Se3 was imaged by electron backscatter diffraction (EBSD) and scanning X-ray diffraction microscopy (SXRM). The crystal orientation at the surface, determined by EBSD, is correlated with the surface topography, which shows triangular pyramidal features with edges oriented in two different orientations rotated in the surface plane by ...
Electron backscatter diffraction (EBSD) is used to investigate crystal lattice rotation caused by plastic deformation during high-strain rate laser shock peening in single crystal aluminum and copper sample on ~11̄0! and (001) surfaces. New experimental methodologies are employed which enable measurement of the in-plane lattice rotation under approximate plane-strain conditions. Crystal lattice ...
We have measured and reconstructed via forward modeling a small volume of microstructure of high purity, well annealed nickel using high energy xray diffraction microscopy (HEDM). Statistical distributions characterizing grain orientations, intra-granular misorientations, and nearest neighbor grain misorientations are extracted. Results are consistent with recent electron backscatter diffractio...
In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeate...
This work utilizes pulsed, melt-mediated laser crystallization techniques to control the spatial distribution of crystalline zones within an as sputterdeposited amorphous matrix. Since shape memory responses stem from crystallographic shifts, only the selectively crystallized regions exhibit these properties. This process provides not only spatial control over the shape memory response, but pot...
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