Infrared spectroscopy of adsorbed CO was used to characterize the dependence of surface structure on deposition temperature during homoepitaxial growth on Cu(100). Intensity borrowing due to dipole coupling greatly enhances the absorption signal due to defect-bonded CO, making it possible to detect and quantify defect concentrations at the level of a few percent. For deposition temperatures bet...

Ahlberg, P. 2016. Graphene Implementation Study in Semiconductor Processing. Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology 1377. 62 pp. Uppsala: Acta Universitatis Upsaliensis. ISBN 978-91-554-9585-5. Graphene, with its two-dimensional nature and unique properties, has for over a decade captured enormous interests in both industry and academ...

Ion implantation is a surface modification technology to produce new material on the surface by impingement of high energy ions from the ion accelerator. In this work, AISI 304 stainless steels were coated with 90 nm Ni film by electron beam deposition and implanted by a flow of 5×1017 N cm−2 at 400 K temperature with different implantation energies of 10, 20, 30 and 40 keV. The prepared sample...

Water splitting for hydrogen production under sunlight using TiO2 as photo catalyst provides a better route for solar energy and attracts the attention of many researchers. The photo catalytic activity of TiO2 under sunlight irradiation depends on the band gap energy. The transition metal doped TiO2 shows an edge over TiO2 in optical absorbance and photo catalytic activity. Thin film of Cr dope...

A Subatmospheric Pressure Chemical Vapor Deposition (SAPCVD) system was implemented for SiO2 nanometric films deposition on silicon substrates. Tetraethoxysilane (TEOS) and ozone (O3) were used as precursors and they were mixed into the SAPCVD system at 590 Torr. The deposition temperatures ranged from 140 to 265 o C and the deposition time ranged from 1 to 15 min. The measured thicknesses from...

A molecular dynamics method has been used to simulate the argon ion-assisted deposition of Cu/Co/Cu multilayers and to explore ion beam assistance strategies that can be used during or after the growth of each layer to control interfacial structures. A low-argon ion energy of 5–10 eV was found to minimize a combination of interfacial roughness and interlayer mixing (alloying) during the ion-ass...

Graphene oxide (GO) thin films were simply deposited on fluorine doped tin oxide (FTO) substrate via a low-voltage electrodeposition. The GO and GO thin films were characterized by Zeta Potential, X-ray diffraction, Ultraviolet-Visible spectroscopy, atomic force microscopy, Fourier transform infrared spectroscopy, field emission scanning electron microscopy and energy dispersive X-ray spectrosc...

Molecular dynamics simulations have been used to explore the effects of incident adatom angle upon the atomic scale structure of Ni/Cu/Ni multilayers grown by vapor deposition under controlled incident atom energy conditions. For incident atom energies of 1 eV or less, increasing the incident angle increased interfacial roughness, resulted in void formation in the nickel layer, and intermixing ...

A combination of molecular dynamics simulations and experiments has been used to investigate the use of various low energy ion assisted vapor deposition approaches for controlling the interfacial structures of a model copper/tantalum multilayer system. Films were grown using argon ion beam assistance with either a fixed or modulated ion energy during metal deposition. The effect of sequential i...

Environmental concerns have resulted in the need for alternative energy efficient methods for the removal of oxides of nitrogen ~NxOy! from atmospheric gas streams and among those techniques is plasma remediation. The devices typically used as plasma sources ~corona and dielectric barrier discharges! operate in a filamentary mode which produces radicals and gas heating in narrow channels. Trans...