In epitaxial growth on vicinal surfaces, elasticity effects give rise to step bunching instability and some self-organization phenomena, which are widely believed to be important in the fabrication of nanostructures. It is challenging to model and analyze these phenomena due to the nonlocal effects and interactions between different length scales. In this paper, we study a discrete model for ep...

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We have synthesized epitaxial Au, Pd, and AuPd nanowire arrays in vertical or horizontal alignment on a c-cut sapphire substrate. We show that the vertical and horizontal nanowire arrays grow from half-octahedral seeds by the correlations of the geometry and orientation of seed crystals with those of as-grown nanowires. The alignment of nanowires can be steered by changing the atom flux. At low...

Epitaxial thin films of ZnMn2O4, grown from an aqueous solution on (100) and (111) spinel MgAl2O4 substrates, have been topotactically reduced and leached to produce epitaxial rock salt MnO on the same substrates. The volume change accompanying the conversion of ZnMn2O4 to 2MnO associated with a loss of Zn and O2 manifests as a network of interconnected, 50-100 nm pores. The topotactic nature o...

The results of optical studies of the effect of pulsed magnetic field (B = 60 mT, τ = 1.2 ms, t = 5 min) on the structural perfection and recombination properties of epitaxial GaN films grown on sapphire are presented. Nonmonotonic changes in the spectral dependence of transmittance and photoluminescence were detected for GaN films after exposure to magnetic field. They occurred during several ...

Density-functional theory calculations are employed to investigate both the epitaxial growth and the magnetic properties of thin Mn and MnSi films on Si(001). For single Mn adatoms, we find a preference for the second-layer interstitial site. While a monolayer Mn film is energetically unfavorable, a capping-Si layer significantly enhances the thermodynamic stability and induces a change from an...

The effects of short-range attraction in metal epitaxial growth are studied. Our results indicate that even at normal incidence, the short-range attraction of depositing atoms to step edges can significantly increase the selected mound angle and surface roughness for typical energies used in epitaxial growth. Our results also lead to a picture of the process of deposition near step edges that i...

Epitaxial graphene layers grown on single-crystal SiC have large structural coherence domains and can be easily patterned into submicron structures using standard microelectronics lithography techniques. Patterned structures show two-dimensional electron gas properties with mobilities exceeding 3 m2/Vs. Magnetotransport measurements (Shubnikov–de Haas oscillations) indicate that the transport p...

InAs nanofins were prepared on a nanopatterned Si (001) substrate by metal-organic vapor-phase epitaxy. The threading dislocations, stacked on the lowest-energy-facet plane {111}, move along the SiO2 walls, resulting in a dislocation reduction, as confirmed by transmission electron microscopy. The dislocations were trapped within a thin InAs epilayer. The obtained 90-nm-wide InAs nanofins with ...

The epitaxial growth of crystalline wurtzite AlN thin films on ~001! Si substrates by plasma-assisted molecular-beam epitaxy is reported. The nucleation and the growth dynamics have been studied in situ by reflection high-energy electron diffraction. Cross-sectional transmission electron microscopy and x-ray diffraction investigations revealed a two-domain film structure (AlN and AlN! with a 30...