In this paper, we propose a highly sensitive and biocompatible glucose sensor using a semiconductor-based field effect transistor (FET) with a functionalized hydrogel. The principle of the FET device contributes to the easy detection of ionic charges with high sensitivity, and the hydrogel coated on the electrode enables the specific detection of glucose with biocompatibility. The copolymerized...

Qubits on solid state devices could potentially provide the rapid control necessary for developing scalable quantum information processors. Materials innovation and design breakthroughs have increased functionality coherence of qubits substantially over past two decades. Here, we show by improving interface between InAs as a semiconductor Al superconductor, one can reliably fabricate voltage-co...

Nanosheet (NS) vertical-stacked complementary field-effect transistors (CFETs), where the NS n-FET and p-FET are vertically stacked controlled using a common gate, would result in maximum device footprint reduction. However, silicon-based transistor will become invalid due to mobility degradation leakage current rising when scaling thickness of channel dielectric. Here, it is experimentally dem...

Proteins mediate the bulk of biological activity and are powerfully assayed in the diagnosis of diseases. Protein detection relies largely on antibodies, which have significant technical limitations especially when immobilized on two-dimensional surfaces. Here, we report the integration of peptide aptamers with extended gate metal-oxide-semiconductor field-effect transistors (MOSFETs) to achiev...

A novel 3D field effect transistor on SOI – screen-grid FET (SGrFET) – is proposed and an analysis of its DC behaviour is presented by means of 2D TCAD analysis. The novel feature of the SGrFET is the design of 3D insulated gate cylinders embedded in the SOI body. This novel gate topology improves efficiency and allows great flexibility in device and gate geometry to optimize DC performance. Th...

In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET) pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used f...

In this paper, we demonstrate that a Flexure-FET [1] (flexure sensitive field effect transistor) can dramatically enhance the sensitivity of stress based chem-bio sensors. A Flexure-FET translates any change in the stress of the suspended gate into corresponding change in the drain current of the integrated transistor, thereby offering direct electrical readout of the sensor signal. Moreover, w...

In this article, a low-power hydrogen (H2) gas sensor has been proposed using two-dimensional (2D) material based Double Gate Field Effect Transistor (2D-FET). It is imperative to highlight that the conventional three-dimensional (3D) materials cannot be scaled down an ultra-low dimension due presence of dangling bonds, surface roughness scattering etc. This creates major challenge in developin...

ABSRACT We have used a number of methods to grow long aligned single-walled carbon nanotubes. Geometries include individual long tubes, dense parallel arrays, and long freely suspended nanotubes. We have fabricated a variety of devices for applications such as multiprobe resistance measurement and high-current field effect transistors. In addition, we have measured conductance of single-walled ...