wileyonlinelibrary.com recent rich advancements in strain engineering, [ 2 ] metal gate stack with high-k dielectrics, [ 3 ] and transistor architecture, [ 4 ] up to the development of Si FinFET devices adopted in current CMOS technology. It is expected that downscaling of Si-based technology will eventually reach its physical limits below 10 nm technology node, a bottleneck that research now t...

Static random access memory (SRAM) cells are being improved in order to increase resistance device level changes and satisfy the requirements of low-power applications. A unique 10-transistor FinFET-based SRAM cell with single-ended read differential write functionality is presented this study. This cutting-edge architecture more power-efficient than ST (Schmitt trigger) 10T or traditional 6T c...

This Sentaurus simulation project provides a template setup for three-dimensional process simulation and device simulations of Omega FinFETs. The threedimensional process simulation is based on a particularly robust approach in which geometry-altering and dopant-related processing steps are executed sequentially in two separate groups. The Sentaurus Workbench template project also performs 3D q...