نتایج جستجو برای: gate transistor

تعداد نتایج: 56440  

Journal: :international journal of nano dimension 0
k. talukdar department of physics, nit durgapur, west bengal, india. a. k. mitra department of physics, nit durgapur, west bengal, india.

the efficient detection of charged biomolecules by biosensor with appropriate semiconducting nanomaterials and with optimum device geometry has caught tremendous research interest in the present decade. here, the performance of various label-free electronic biosensors to detect bio-molecules is investigated by simulation technique. silicon nanowire sensor, nanosphere sensor and double gate fiel...

Journal: :Integration 2004
Scott C. Smith Ronald F. DeMara Jiann S. Yuan D. Ferguson D. Lamb

Self-timed logic design methods are developed using Threshold Combinational Reduction (TCR) within the NULL Convention Logic (NCL) paradigm. NCL logic functions are realized using 27 distinct transistor networks implementing the set of all functions of four or fewer variables, thus facilitating a variety of gatelevel optimizations. TCR optimizations are formalized for NCL and then assessed by c...

2012
Nuo Xu Sayeef Salahuddin

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise, to republish, to post on servers or to redistribute to lists, requires prior specific permission....

2006
Yawei Jin Mark Johnson Doug W. Barlage Rhett Davis

JIN, YAWEI. Simulation Methodology to Compare Emerging Technologies for Alternatives to Silicon Gigascale Logic Device. (Under the direction of Dr. D. W. Barlage). Practical realization of low-power, high-speed transistor technologies for future generation nano-electronics can be achieved with novel structures, such as FinFET, tri-gate or with the integration of exotic channel materials, such a...

In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

2017
Arash Takshi Houman Yaghoubi Jing Wang Daniel Jun J. Thomas Beatty

Due to the high internal quantum efficiency, reaction center (RC) proteins from photosynthetic organisms have been studied in various bio-photoelectrochemical devices for solar energy harvesting. In vivo, RC and cytochrome c (cyt c; a component of the biological electron transport chain) can form a cocomplex via interprotein docking. This mechanism can be used in vitro for efficient electron tr...

Journal: :Advanced Materials Interfaces 2023

Abstract This article reports on the charge transport characteristics across potential barrier generated by a local dual‐gate modulation at surface of p‐doped graphene via contact fluorocarbon (CF) thin film. Owing to simple physical contact, strong electron affinity fluorine atoms in CF stably increases hole density graphene, which leads massive p‐doping effect graphene. Then, height can be an...

2012
Christopher Heidelberger

A novel permeable gate transistor was designed for use in high-resolution, high-voltage transistor backplanes for digital printing applications. While standard designs for digital xerography require thinfilm transistors (TFTs) capable of switching over 5001500V, with this improvement, TFTs would only be required to switch over 5V, improving resolution and ease of manufacturing. Conducting polym...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید