نتایج جستجو برای: high current capability

تعداد نتایج: 2732874  

2007
Soliman A. Mahmoud Ahmed H. Madian Ahmed M. Soliman

ETRI Journal, Volume 29, Number 2, April 2007 A novel low-voltage CMOS current feedback operational amplifier (CFOA) is presented. This realization nearly allows rail-to-rail input/output operations. Also, it provides high driving current capabilities. The CFOA operates at supply voltages of ±0.75 V with a total standby current of 304 μA. The circuit exhibits a bandwidth better than 120 MHz and...

Journal: :محیط زیست طبیعی 0
میلاد جانعلی پور دانشجوی دکتری دانشکده مهندسی ژئوماتیک، دانشگاه صنعتی خواجه نصیر الدین طوسی علی محمدزاده استادیار دانشکده مهندسی ژئوماتیک، دانشگاه صنعتی خواجه نصیر الدین طوسی محمد جواد ولدان زوج دانشیار دانشکده مهندسی ژئوماتیک، دانشگاه صنعتی خواجه نصیر الدین طوسی

various indexes such as rvi, ndvi, savi and osavi have been proposed for vegetation detection using satellite images. these indexes have been obtained based on high reflectance of the vegetation in near infrared band and its high absorption in red band. basic defect of these indexes are using them in various regions without any changes in index structure. in other words, these indexes have not ...

Journal: :Chemical communications 2013
Manab Kundu Cheuk Chi Albert Ng Dmitri Y Petrovykh Lifeng Liu

Mesoporous MnO2 nanosheet arrays have been directly grown on nickel foam current collectors and exhibited a reversible capacity as high as 1690 mA h g(-1) even after one hundred cycles at 100 mA g(-1). They also reveal good rate capability and excellent cycling stability.

2007
V. Barger S. Pakvasa

We show that current experimental constraints already severely restrict what might be observable at ee colliders. We identify some cases where it may be possible to probe physics beyond what might be possible at other facilities and make some remarks about physics capability of high energy ee colliders.

2007
Wen-Kuan Yeh

For SOI nMOSFET, the impact of high tensile stress contact etch stop layer (CESL) on device performance and reliability was investigated. In this work, device driving capability can be enhanced with thicker CESL, larger LOD and narrower gate width. With electrical and body potential inspection, serious device’s degradation happened on SOI-MOSFET with narrow gate device because of STI-induced ed...

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