In this study, we report on a demonstration of hydrogen sensing at low temperature using SnO2 functionalized AlGaN/GaN high electron mobility transistors (HEMT). The SnO2 dispersion was synthesized via a hydrothermal method and selectively deposited on the gate region of a HEMT device through a photolithography process. The high electron sheet carrier concentration of nitride HEMTs provides an ...

We demonstrate an AlN/AlGaN high-electron-mobility transistor (HEMT) fabricated on a free-standing AlN substrate. A metal stack, composed of Zr/Al/Mo/Au, was found to show low contact resistivity for source and drain ohmic contacts. The fabricated AlN/AlGaN HEMT exhibited a maximum drain current of 38 mA/mm with a threshold voltage of -3.4 V. Negligible drain current degradation was observed at...

This paper describes the design and realization of a high performance linear power amplifier in the 2.4GHz band for the IEEE 802.11b/g WLAN (Wireless Local Area Network) and ISM (Industrial Scientific and Medical) applications using a proprietary 0.5um enhancement-mode Pseudomorphic High-Electron-Mobility Transistor (e-pHEMT) technology. The amplifier exhibits a linear power output of 18.5dBm a...

We study enhancement-mode n-GaN/InAlN/GaN high electron mobility transistors (EHEMTs) by means of twodimensional numerical device simulation. An introduction of a highly-doped GaN cap layer, which is recessed under the gate, was initially proposed for an improvement of the device performance by diminishing surface traps-related parasitic effects. Our new simulation results reveal that, unlikely...

In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The Al...

2010 marked the 30 anniversary of the HighElectron Mobility Transistor (HEMT). The HEMT represented a triumph for the, at the time, relatively new concept of bandgap engineering and nascent molecular beam epitaxy technology. The HEMT showcased the outstanding electron transport characteristics of twodimensional electron gas (2DEG) systems in III-V compound semiconductors. In the last 30 years, ...

We review our recent results obtained on an AlN/GaN-based high-electron-mobility transistor. The temperature of the electrons drifting under a relatively-high electric field is significantly higher than the lattice temperature (i.e., the hot electrons are generated). These hot electrons are produced through the Fröhlich interaction between the drifting electrons and long-lived longitudinal-opti...

The interaction between intersubband resonances (ISRs) and metamaterial microcavities constitutes a strongly coupled system where new resonances form that depend on the coupling strength. Here we present experimental evidence of strong coupling between the cavity resonance of a terahertz metamaterial and the ISR in a high electron mobility transistor (HEMT) structure. The device is electrically...

Related Articles Silicon-based reproducible and active surface-enhanced Raman scattering substrates for sensitive, specific, and multiplex DNA detection Appl. Phys. Lett. 100, 203104 (2012) Cantilever deflection associated with hybridization of monomolecular DNA film J. Appl. Phys. 111, 074310 (2012) Integrated microfluidic chip for rapid DNA digestion and time-resolved capillary electrophoresi...

AlGaN/GaN high electron mobility transistor (HEMT)-sensor with a catalytic Pt-gate is fabricated and tested for toxic H2S gas detection. AlGaN/GaN was chosen to extend the sensor detection range and to be able to operate at temperatures beyond those allowed by state-of-art Si-FET sensors. Testing was performed using a gas mixing apparatus in dry synthetic air ambient. High sensitivity, ΔI/I0, 8...