The characteristics of a typical 70nm high K gate dielectrics MOSFET with different source/drain structure including S/D lift-up structure are simulated by two dimensional device simulator. The impact of FIBL effect the gate dielectric permikttivity increasing to the characteristics of MOSFET is investigated. The simulation results shows that the degradation of MOSFET characteristics can be sup...

From high precision measurements of the complex dielectric constant of especially prepared samples of H2O, we identify the onset temperatures of the phase transition into and out of ice XI from ice Ih to occur at TIh-XI = 58.9 K and TXI-Ih = 73.4 K. For D2O, TIh-XI = 63.7 K and TXI-Ih = 78.2 K. A triple point is identified to exist at 0.07 GPa and 73.4 K for H2O and 0.08 GPa and 78.2 K for D2O ...

Scaling of silicon dioxide dielectrics has once been viewed as an effective approach to enhance transistor performance in complementary metal-oxide semiconductor (C-MOS) technologies as predicted by Moore’s law [1]. Thus, in the past few decades, reduction in the thickness of silicon dioxide gate dielectrics has enabled increased numbers of transistors per chip with enhanced circuit functionali...

As the semiconductor nano-electronics industry progresses toward incorporating increasingly lower dielectric constant materials as the inter layer dielectric (ILD) in Cu interconnect structures, thermo-mechanical reliability is becoming an increasing concern due to the inherent fragility of these materials. Therefore, the need for metrologies to assess the mechanical properties and elastic cons...

The d.c conductivity, static dielectric constant and thermopower of TTF—TCNQ have been calculated for temperatures below 54K within a self-consistent effective medium approximation. TTF—TCNQ is assumed to consist of small regions which are semiconducting and others which are highly conducting. The conducting regions have a large negative dielectric constant, a large d.c. conductivity and a nega...

Polycrystalline samples of Gd-modified Lead Zirconate Titanate [PGZT; Pb1-xGdx(Zr0.65Ti0.35)1-x/4O3] ceramics (where, x = 0.00, 0.06 and 0.09) were prepared using high temperature mixed oxide method at sintering temperature 1450 K. Preliminary structural analysis through X-ray diffraction technique suggests their formation in single phase tetragonal crystal system at room temperature. From the ...

In ultrathin wires positioned on high-k dielectric substrates or nearby metallic gates, electrons can form strongly correlated one-dimensional fluids already at rather high electron densities. The density-density correlation function, charge compressibility, spin susceptibility, and electron specific heat of such fluids are calculated analytically. The results are relevant for transport and the...

The dielectric properties of newly synthesized Ag0.1Cu0.9InP2S6 crystals were investigated in broad frequency (20 Hz – 1 MHz) and temperature range (110 K – 350 K). Anomaly in the temperature dependence of a complex dielectric permittivity indicating the polar phase transition was detected at the temperature 283 K . The dielectric properties of the presented crystal are mainly caused by conduct...

Low-frequency noise (LFN) characterization of high-k LaLuO3/TiN nMOS transistors is presented. The experimental results including the noise spectrum and normalized power noise density and mobility are reported. The noise results were successfully modeled to the correlated number and mobility fluctuation noise equation. High-k dielectric devices show lower mobility and roughly one to two orders ...