نتایج جستجو برای: implantation atoms
تعداد نتایج: 119500 فیلتر نتایج به سال:
Studies on exotic atoms are important in different ways. They are important for strong interaction with nucleus and the theory of QCD in low energies. They are also important in muon catalyzed fusion (µCF). Their properties can be revealed by studies on cascade of muonic atoms. In this paper, unlike the others, we do not consider the kinetic energy of muonic atoms, constant (the kinetic energ...
The lattice location of copper in single-crystalline zinc oxide was studied by means of the emission channeling technique. Following 60-keV room-temperature implantation at a fluence of 2.3310 cm, the angular distribution of b particles emitted by the radioactive isotope Cu was measured by a position-sensitive detector. The b emission patterns give direct evidence that in the as-implanted state...
The synchrotron based high resolution grazing emission x-ray fluorescence (GEXRF) technique is used to extract the distribution of Al ions which were implanted with a dose of 10 atoms/cm in Si wafers with different energies ranging between 1 and 100 keV. In this purpose an angular scan around the critical angle was made. In addition special efforts were made to improve the experimental conditio...
End of range ~EOR! defects are the most commonly observed defects in ultrashallow junction devices. They nucleate at the amorphous-crystalline interface upon annealing after amorphization due to ion implantation. EOR defects range from small interstitial clusters of a few atoms to $311% defects and dislocation loops. They are extrinsic defects and evolve during annealing. Li and Jones @Appl. Ph...
Using analytical transmission electron microscopy techniques, nanocrystals embedded in 4H–SiC are studied which formed after high dose samarium (Sm), cobalt (Co), and Sm-and-Co-ion implantations and annealing. SmSi2, Sm5C2, Co2Si and SmCo-rich nanocrystals have been identified in terms of their crystallography, shape, strain, size, and orientation relationship to the matrix. It is shown, moreov...
We report the realization of a new mult-band-gap semiconductor. Zn(1-y)Mn(y)OxTe1-x alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn(1-y)Mn(y)Te host. When only 1.3% of Te ato...
We demonstrate the coupling of single color centers in diamond to plasmonic and dielectric photonic structures to realize novel nanophotonic devices. Nanometer spatial control in the creation of single color centers in diamond is achieved by implantation of nitrogen atoms through high-aspect-ratio channels in a mica mask. Enhanced broadband single-photon emission is demonstrated by coupling nit...
The interaction between plasma particles and tungsten as plasma facing material is one of the critical issues in successfully using tungsten in Tokamak reactors environment. The deuterium bombardment of monocrystalline tungsten was modeled by molecular dynamics simulation using LAMMPS code and Tersoff type interatomic potential. The deuterium trapping rate, implantation depth, and the stopping ...
Gas phase p-doping of InAs nanowires with Zn atoms is demonstrated as an effective route for enabling postgrowth dopant profiling of nanostructures. The versatility of the approach is demonstrated by the fabrication of high-performance gated diodes and p-MOSFETs. High Zn concentrations with electrically active content of approximately 1 x 10(19) cm(-3) are achieved which is essential for compen...
Silicon epitaxy on hydrogen-terminated Si(001) surfaces has been studied using molecular dynamics simulations. Epitaxy on the dihydride-terminated Si(001 )-( 1 × 1) surface is inhibited for Si atoms at thermal energies due to strain hindrances created by hydrogen. At greater incident Si atom energies (2-10 eV), epitaxy proceeds primarily through "subplantation", i.e. subsurface implantation of ...
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