نتایج جستجو برای: impurity ion concentration
تعداد نتایج: 574199 فیلتر نتایج به سال:
We report low-temperature measurements of electron decoherence time in a series of pure gold wires, 18 nm thick and 30 nm wide. At fields up to 15 T, large enough to polarize any concentration of magnetic impurity spins, conductance fluctuation measurements show almost no temperature dependence of the decoherence time below 300 mK, both in the correlation field for interference and the root-mea...
Temperature and doping dependencies of electron mobility in InP, GaP and Ga0.52In0.48P structures have been calculated using an iterative technique. The following scattering mechanisms, i.e, impurity, polar optical phonon, acoustic phonon and piezoelectric are included in the calculation. Ionized impurity scattering has been treated beyond the Born approximation using the phaseshift analysis. I...
Time-resolved luminescence data from heavily nitrogen doped ZnSe ~total N concentration exceeding mid-10/cm) is presented. The luminescence exhibited a decay time and a rise time which increased with decreasing energy of observation. Furthermore, both the decay times and rise times decreased with increasing temperature. These observations are consistent with the following model: ~i! a band of s...
Thermodynamic and kinetic aspects of interfacial decohesion are analyzed for a uniformly stressed interface in the presence of an embrittling impurity. During the interfacial separation, the impurity penetrates into the interface and reduces it cohesion. Rice (1976) and Hirth and Rice (1980) analyzed the thermodynamics of this process in great detail with emphasis on the limiting cases of infin...
The effects of interface and bulk-impurity charges on electron mobility in a MOSFET are compared by using Monte Carlo simulation. It has been shown that the increase in bulk-impurity concentration causes a reduction of mobility at low electric fields, in two ways: (i) an increase of Coulomb interaction produced by an increase of charges in the bulk; and (ii) the reduction of screening caused by...
Based on the defect model that the impurity Cu2+ in TiO2 on the octahedral Ti4+ site is associated with one oxygen vacancy VO along the C2 axis, the electron paramagnetic resonance (EPR) parameters, i. e., the g factors gi (i = x,y,z) and the hyperfine structure constants Ai, of the Cu2+– VOcenter in TiO2 are calculated by using the perturbation formulas of these parameters for a 3d9 ion in a r...
The energy band structure of FeAs-based superconductors is fitted by a tight-binding model with two Fe ions per unit cell and two degenerate orbitals per Fe ion. Based on this, superconductivity with extended s-wave pairing symmetry of the form cosk(x)+cosk(y) is examined. The local density of states near an impurity is also investigated by using the T-matrix approach. For the nonmagnetic scatt...
In this paper, the effect of pressure, temperature and impurity on the energylevels, binding energy, linear and nonlinear optical properties of a modified Gaussianquantum dot are studied. In this regard, the finite element method is employed to solvethe single electron Schrodinger equation in the effective mass approximation with andwithout impurity at the center of the dot. In addition, the en...
A readily reversible rise in pH of the medium occurs when unbuffered spinach chloroplasts are illuminated, especially when the initial pH during incubation in the dark is at or below 6.5 (1, 2). This rise in pH had been predicted from an examination of the chemiosmotic mechanisms for phosphorylation detailed by Mitchell (3). It was correlated, in at least a preliminary way, with the existence i...
We report on our theoretical investigation of the electron velocity in (narrow) quantum-Hall systems, considering the out-of-linear-response regime. The electrostatic properties of the electron system are obtained by the Thomas-Fermi-Poisson nonlinear screening theory. The electron velocity distribution as a function of the lateral coordinate is obtained from the slope of the screened potential...
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