Proton implantation-induced intermixing of InAs quantum dots QDs capped with InP, GaInAsP, and InP and InGaAs layers grown by metal-organic chemical vapor deposition is investigated. The samples are annealed at 750, 800, 850, and 900 °C for 30 s and thermal stability of the QDs is studied. The optimum annealing temperature is around 800 °C which gives maximum implantation-induced energy shift. ...
