With the global climate change, continuous consumption of non-renewable energy and improvement human requirements for environmental protection, concept carbon emission has gradually become popular. One main ways to reduce emissions is use clean energy, among which solar a kind renewable that can be widely used. Based on basic principle cells through classification cell materials, this paper int...

The properties of thin InGaN films deposited via MOVPE on non-planar GaN surfaces are investigated in detail. Using a comprehensive combination of different investigation methods including transmission electron microscopy, spatially and time-resolved cathodoluminescence experiments and modeling of the radiative recombination kinetics a precise description of the semipolar QW properties can be p...

Articles you may be interested in High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111) Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy Appl.

Regularly patterned InGaN/GaN quantum-well nanorod (NR) light-emitting diode (LED) arrays are grown with MOCVD and characterized with cathodoluminescence and transmission electron microscopy. The dependencies of their morphologies and emission behaviors on the geometry of growth pattern and MOCVD growth condition are investigated. Also, a light-emitting device consisting of such an NR LED array...

Introduction: Semiconductor visible laser diodes (LDs) cover a wide spectrum of wavelengths. For example, the InGaN/GaN based LDs cover the violet to green spectrum (∼405–530 nm), and InGaP/ InAlGaP system based LDs cover the red spectrum (635–690 nm). The wavelength from ∼530–635 nm is not covered by any commercial LDs yet, which has some important applications in medicine [1, 2], horticulture...

In this paper, we have calculated the efficiency and I-V characteristic of a Quantum Dot (QD) Solar Cell (SC) based on multi-stacked different-sized InGaN QDs on GaN substrate. In order to engineering the confinement states of QDs, we have inserted differentsized QDs in i-region of a p-i-n structure which includes different layers. This leads to Rainbow SCs.

We report on high-electrical-stress testing of Nichia GaN/InGaN/AlGaN single-quantum-well (SQW) light-emitting diodes. In contrast to our earlier experiments with double-heterostructure LEDs, the present SQW devices have been improved to the point that the encapsulating plastic fails under high electrical stress earlier than the diode itself. ( 1998 Published by Elsevier Science B.V. All rights...

A highly self-ordered hexagonal array of cylindrical pores has been fabricated by anodizing a thin film of Al on substrate and subsequent growth of GaN and InGaN in these nanoholes has been performed. This AAO templatebased synthesis method provides a low cost process to fabricate GaN-based nanomaterials fabrication.

An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabri...