نتایج جستجو برای: innovation in film cooling

تعداد نتایج: 17035755  

Journal: :Journal of Thermal Science and Technology 2019

Journal: :ACS applied materials & interfaces 2013
Seok-Ju Kang Youn-Su Kim Won Bae Kim Dong-Yu Kim Yong-Young Noh

We report a method for controlling the orientations of conjugated polymers in the active layer of organic thin-film transistors (OTFTs) by annealing the film at the melting temperature in a vertically aligned multiwalled carbon nanotube (VA-CNT) template under various load pressures. Poly(3-hexylthiophene) [P3HT] molecules are effectively aligned in the melting state annealing at 240 °C for 30 ...

Journal: :Thermal Science 2022

A series of high resolution simulations on film cooling with varying blowing ratios and inclination angles are carried out by using in-house code based hybrid thermal lattice Boltzmann method. Three ranging from 0.2-0.8 four 15? to 60? chosen for the simulations. The evolutionary mechanism coherent structure in three domains film-covering region is studied view space time. Besides, influencing ...

Journal: :Investigative ophthalmology & visual science 2013
Carolyn Begley Trefford Simpson Haixia Liu Eliza Salvo Ziwei Wu Arthur Bradley Ping Situ

PURPOSE The purpose of this study was to test the association between tear film fluorescence changes during tear break-up (TBU) or thinning and the concurrent ocular sensory response. METHODS Sixteen subjects kept one eye open as long as possible (MBI), indicated their discomfort level continuously, and rated ocular sensations of irritation, stinging, burning, pricking, and cooling using visu...

2008
G. S. Hwang H. Kim S. W. Lee N. Ghafouri B. L. Huang C. Uher K. Najafi

A suspended, planar multistage micro thermoelectric (TE) cooler is designed using thermal network model to cool MEMS devices. Though the planar (two-dimensional) design is compatible with MEMS fabrication, its cooling performance is reduced compared to that of a pyramid (three-dimensional) design, due to a mechanically indispensable thin dielectric substrate (SiO2) and technical limit on TE fil...

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