This paper explains the performance analysis of Gate-AllAround silicon nanowire with 80nm diameter field effect transistor based CMOS based device utilizing the 45-nm technology. Simulation and analysis of nanowire (NW) CMOS inverter show that there is the reduction of 70% in leakage power and delay minimization of 25% as compared with 180 nm channel length.Gate-All-Aorund (GAA) configuration p...

Detection of THz radiation by a Field Effect Transistor InGaAs/InAlAs transistor was investigated at 4.2 K as a function of the magnetic field and gate voltage. We observed oscillations of the photovoltaic signal analogous to Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance conditions. The results are successfully quantitatively described within the...

We fabricated a pH-sensitive device on a glass substrate based on properties of carbon nanotubes. Nanotubes were immobilized specifically on chemically modified areas on a substrate followed by deposition of metallic source and drain electrodes on the area. Some nanotubes connected the source and drain electrodes. A top gate electrode was fabricated on an insulating layer of silane coupling age...

We report on a GaN metal-oxide-semiconductor field-effect-transistor (MOSFET) using atomic-layer-deposited (ALD) Al2O3 as the gate dielectric. Compared to a GaN metal-semiconductor field-effect-transistor (MESFET) of similar design, the MOSFET exhibits several orders of magnitude lower gate leakage and near three times higher channel current. This implies that the ALD Al2O3/GaN interface is of ...

This paper discusses the electrical properties of the complementary heterojunction field-effect transistor (CHFET) at 4 K, induding the gate leakage current, the subthreshold transconductance, and the input-referred noise voltage. The CHFET is a GaAs-based transistor analogous in structure and operation to silicon CMOS, and is being explored for possible application in readout electronics opera...

SLIDING-MODE control is a control technique used widely in electromechanical systems today [1–4]. It bases on using main characteristics of modern inverter semiconductor switches as Insulated Gate-Commutated Transistors (IGCTs) or Insulated-Gate Bipolar Transistors (IGBTs) that are operating in switch mode with distinctly higher switching frequency [5] than formerly used Gate-Turn-Off Thyristor...

We have demonstrated a room-temperature silicon single-electron transistor memory that consists of ~i! a narrow channel metal-oxide–semiconductor field-effect transistor with a width ~;10 nm! smaller than the Debye screening length of single electron; and ~ii! a nanoscale polysilicon dot ~;737 nm! as the floating gate embedded between the channel and the control gate. We have observed that stor...

Two standard commercial flashlamp-pumped Nd:YAG (YAG denotes yttrium aluminum garnet) lasers have been upgraded to "pulse-burst" capability. Each laser produces a burst of up to 15 2 J Q-switched pulses (1064 nm) at repetition rates of 1-12.5 kHz. Variable pulse-width drive (0.15-0.39 ms) of the flashlamps is accomplished by insulated gate bipolar transistor (IGBT) switching of electrolytic cap...

A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transi...

Gate-drain capacitance and conductance measurements were performed on an Al0.15Ga0.85N/GaN heterostructure field-effect transistor to study the effects of trap states on frequency-dependent device characteristics. By varying the measurement frequency in addition to the bias applied to the gate, the density and time constants of the trap states have been determined as functions of gate bias. Det...