We report the fabrication of transparent and flexible transistors where both the bottom gate and the conducting channel are carbon nanotube networks of different densities and Parylene N is the gate insulator. Device mobilities of 1 cm(2) V(-1) s(-1) and on/off ratios of 100 are obtained, with the latter influenced by the properties of the insulating layer. Repetitive bending has minor influenc...

Switchable and tunable chiral metamaterial response is numerically demonstrated here in different uniaxial chiral metamaterial structures operating in the THz regime. The structures are based on the bi-layer conductor design and the tunable/switchable response is achieved by replacing parts of the metallic components of the structures by photoconducting Si, which can be transformed from an insu...

Electrophotography is a very useful tool for x-ray diagnosis of the soft tissue and the bone due to the edge effect having wide latitude and high contrast. However, in usual electroradiography, larger exposure doses are necessary compared to silver haloid method owing to the low sensitivtity to x-rays. Very sensitive electroradiography is developed as K.I.P. method, using special photoconductiv...

A broad range of materials is currently being studied for possible use as the insulating layer in next generation metal-oxide-semiconductor transistors. Inelastic electron tunneling spectroscopy (IETS) has become a powerful tool to characterize both the structural and electrical properties of the resulting device structures made from these materials. IETS can address issues related to reactions...

The collective behavior of correlated electrons in the VO2 interface layer of the LaVO(3)/SrTiO(3) heterostructure is studied within a quarter-filled t(2g)-orbital Hubbard model on a square lattice. We argue that the ground state is ferromagnetic, driven by the double-exchange mechanism, and is orbitally and charge ordered due to a confined geometry and electron correlations. The orbital and ch...

A formalism to calculate the transmission coefficient t of electrons from a material L into the same material L through a barrier B is presented. The barrier B is arbitrary, and can be metallic, semiconducting, or insulating. The important feature of this formalism is that it starts from the electronic structure of a periodic L/B superlattice. The electronic structure of such a superlattice is ...

Atomic layer deposition (ALD) of tin oxide (SnO2) thin films was achieved using a cyclic amide of Sn(II) (1,3-bis(1,1-dimethylethyl)4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene) as a tin precursor and nitric oxide (NO) as an oxidant gas. Film properties as a function of growth temperature from 130–250 C were studied. Highly conducting SnO2 films were obtained at 200–250 Cwith the growt...

The interfaces of LaAlO3/SrTiO3 and (LaAlO3)x(SrTiO3)1−x/SrTiO3 heterostructures have been investigated by soft x-ray photoelectron spectroscopy for different layer thicknesses across the insulator-to-metal interface transition. The valence band and Fermi edge were probed using resonant photoemission across the Ti L2,3 absorption edge. The presence of a Fermi-edge signal originating from the pa...

These computational models are at the core of collisional plasma theories. In particular we will discuss several aspects of conservative solvers for the kinetic transport equations of particle interactions that involve either linear or non-linear Boltzmann as well as the non-linear Landau equations, by means of stagger conservative DG schemes for the transport part and DG or spectral solvers fo...

In spite of much work on topological insulators (TIs), systematic experiments for TI/TI heterostructures remain absent. We grow a high quality heterostructure containing single quintuple layer (QL) of Bi2Se3 on 19 QLs of Bi2Te3 and compare its transport properties with 20 QLs Bi2Se3 and 20 QLs Bi2Te3. All three films are grown on insulating sapphire (0001) substrates by molecular beam epitaxy (...