Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducted states on their edge or surface. These states are possible due to the combination of spinorbit interactions and time-reversal symmetry. The two-dimensional (2D) topological insulator is a quantum spin Hall insulator, which is a close cousin of the integer quantum Hal...

Due to the self-propagating nature of the heterochromatic modification H3K27me3, chromatin barrier activities are required to demarcate the boundary and prevent it from encroaching into euchromatic regions. Studies in Drosophila and vertebrate systems have revealed several important chromatin barrier elements and their respective binding factors. However, epigenomic data indicate that the bindi...

This is a project report from the Power Systems Engineering Research Center (PSERC). PSERC is a multi-university Center conducting research on challenges facing a restructuring electric power industry and educating the next generation of power engineers. More information about PSERC can be found at the Center's website: and major advisor in the preparation of the thesis. We express our apprecia...

In this paper, a novel device architecture called the fully depleted silicon-on-insulator field-effect transistor with block oxide (bFDSOI-FET) is proposed to investigate the influence of block oxide height (HBO) on the electrical characteristics. According to the two-dimensional (2-D) simulation results, the characteristics of the proposed structure are similar to those of the ultra-thin (UT) ...

Optomechanical circuits are a promising candidate to realize various signal processing functions on a chip. In this paper we review several different NOMS structures fabricated in a silicon-on-insulator platform. © 2010 Optical society of America OCIS-codes: (130.3120) Integrated optics devices; (250.4745) Optomechanics

−The EKV model, a continuous model for the MOS transistor, has been adapted to both partially depleted SOI MOSFETs with grounded body (GBSOI) and dynamic threshold MOS (DTMOS) transistors. Adaptation is straightforward and helps to understand the physics of the DTMOS. Excellent agreement is found between the model and the measured characteristics of GBSOI and DTMOS devices Index Terms− Silicon-...

Mechanical bending is ubiquitous in heteroepitaxial growth of thin films where the strained growing film applies effectively an “external” stress to bend the substrate. Conventionally, when the deposited film is much thinner than the substrate, the bending increases linearly with increasing film thickness following the classical Stoney formula. Here we analyze the bending of ultrathin nanometer...