In this letter, a monolithically integrated SiC circuit breaker device providing self-triggered blocking operation is presented. The proposed topology implemented into common 4H-SiC JFET technology, which offers conventional cell design and chip scaling opportunities. Basic implications are discussed on the basis of quasi-static electrical measurements fabricated nJFET, pJFET devices. experimen...

We investigate the dynamics of optoelectronic oscillator (OEO) systems based on resonant tunneling diode photodetector (RTD-PD) and laser diode hybrid integrated circuits. We demonstrate that RTD-based OEOs can be noise-activated in either monostable or bistable operating conditions, providing a rich variety of signal outputs—spiking, square pulses, bursting—and behaviours—stochastic and cohere...

The III-V compounds and alloys have been studied for three decades. Until recently, these materials have been commercialized for only a few specialized optoelectronic devices and microwave devices. Advances in thin-film epitaxy techniques, such as liquid phase epitaxy and chemical vapor deposition, are now providing the ability to form good quality lattice-matched heterojunctions with III-V mat...

A multilayered integrated circuit (IC) package structure is composed of many signal layers, power layers, and ground layers. Particularly, the whole planes are assigned for the power and ground of the system. Accordingly, the generic circuit representation of such a complicated multilayer IC package becomes too complicated to efficiently evaluate its electrical performance. In this work, a nove...

This research proposes a novel MCDMmodel, including DEMATEL, ANP, and VIKOR for exploring portfolio selection based on CAPM. We probe into the influential factors and relative weights of risk-free rate, expected market return, and beta of the security. The purpose of this research is to establish an investment decision model and provides investors with a reference of portfolio selection most su...